Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Abstract

The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

“…Similar decrease of P r was observed in Pt/BTO/ITO structure (not shown here) and therefore, the tensile stress, as suggested by the XRD analysis, might be responsible for the observed decline. Moreover, similar decrease in the P r value was observed in PZT thin films under a tensile stress of 0.2% 51 . The I-V characteristics of the Pt/HAO/BTO/ITO structures after the fatigue test (10 9 reversal cycles) were also investigated.…”

Formation of anisotropic grains and modified ferroelectric properties in Cr‐doped Bi5FeTi3O15 thin films

“…Ferroelectric materials with the large lattice aspect ratio have a complicated three-dimensional domain structure consisting of 90° and 180° domain boundaries. [19][20][21][22] An increase in the lattice aspect ratio produces more non-180° domain walls and makes the domain structure more complicated. This leads to an increase in the coercive field E c .…”

Swift heavy ion induced material modifications in Ba1‐xSrxTiO3 ceramics as probed by temperature‐dependent Raman spectroscopy

“…Exposure to ionizing radiation may modify these materials leading to degradation in their performance. The effect of ionizing (Gamma, electron, and X‐rays) radiation in ferroelectrics are studied extensively . However, effects of SHI irradiation on ferroelectric ceramics are taken up rather recently and mostly on lead‐based ferroelectrics.…”