Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path coupled to the surrounding polarization. They have been proposed for use as non-volatile memory with non-destructive operation and ultralow energy consumption. Yet the evolution of domain walls during polarization switching makes it challenging to control their location and conductance precisely, a prerequisite for controlled read-write schemes and for integration in scalable memory devices. Here, we explore and reversibly switch the polarization of square BiFeO nanoislands in a self-assembled array. Each island confines cross-shaped, charged domain walls in a centre-type domain. Electrostatic and geometric boundary conditions induce two stable domain configurations: centre-convergent and centre-divergent. We switch the polarization deterministically back and forth between these two states, which alters the domain wall conductance by three orders of magnitude, while the position of the domain wall remains static because of its confinement within the BiFeO islands.

Polymer-ceramic piezoelectric composites, combining high piezoelectricity and mechanical flexibility, have attracted increasing interest in both academia and industry. However, their piezoelectric activity is largely limited by intrinsically low crystallinity and weak spontaneous polarization. Here, we propose a Ti3C2Tx MXene anchoring method to manipulate the intermolecular interactions within the all-trans conformation of a polymer matrix. Employing phase-field simulation and molecular dynamics calculations, we show that OH surface terminations on the Ti3C2Tx nanosheets offer hydrogen bonding with the fluoropolymer matrix, leading to dipole alignment and enhanced net spontaneous polarization of the polymer-ceramic composites. We then translated this interfacial bonding strategy into electrospinning to boost the piezoelectric response of samarium doped Pb (Mg1/3Nb2/3)O3-PbTiO3/polyvinylidene fluoride composite nanofibers by 160% via Ti3C2Tx nanosheets inclusion. With excellent piezoelectric and mechanical attributes, the as-electrospun piezoelectric nanofibers can be easily integrated into the conventional shoe insoles to form a foot sensor network for all-around gait patterns monitoring, walking habits identification and Metatarsalgi prognosis. This work utilizes the interfacial coupling mechanism of intermolecular anchoring as a strategy to develop high-performance piezoelectric composites for wearable electronics.

We study domain wall dynamics in Permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that domain wall oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10{7} A/cm{2}.

The integration of ferroic oxide thin films into advanced flexible electronics will bring multifunctionality beyond organic and metallic materials. However, it is challenging to achieve high flexibility in single-crystalline ferroic oxides that is considerable to organic or metallic materials. Here, we demonstrate the superior flexibility of freestanding single-crystalline BiFeO3 membranes, which are typical multiferroic materials with multifunctionality. They can endure cyclic 180° folding and have good recoverability, with the maximum bending strain up to 5.42% during in situ bending under scanning electron microscopy, far beyond their bulk counterparts. Such superior elasticity mainly originates from reversible rhombohedral-tetragonal phase transition, as revealed by phase-field simulations. This study suggests a general fundamental mechanism for a variety of ferroic oxides to achieve high flexibility and to work as smart materials in flexible electronics.

Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, we demonstrate a ferroelectric domain wall switch with three distinct addressable resistance states. The device operation hinges on fully-controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, we alter the shape -and hence the charge state -of the domain wall, and ultimately its conduction. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic-piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head-to-head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.