Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

Balestra, F.; Cristoloveanu, S.; Benachir, M.; Brini, J.; Elewa, T.

doi:10.1109/edl.1987.26677

Cited by 713 publications

(317 citation statements)

References 3 publications

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“…In applications like the DGMOS [4], the frontier ∂ω × [0, 1] includes the source and the drain contacts as well as an insulating or artificial boundary. On the other hand, ω × {0} and ω × {1} represent the gate contacts (in addition to possible insulating boundaries).…”

Section: Introduction and Main Resultsmentioning

confidence: 99%

Diffusive Transport of Partially Quantized Particles: Existence, Uniqueness and Long-Time Behaviour

Abdallah¹,

Méhats²,

Vauchelet³

2006

Proceedings of the Edinburgh Mathematical Society

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A self-consistent model for charged particles, accounting for quantum confinement, diffusive transport and electrostatic interaction is considered. The electrostatic potential is a solution of a threedimensional Poisson equation with the particle density as the source term. This density is the product of a two-dimensional surface density and that of a one-dimensional mixed quantum state. The surface density is the solution of a drift-diffusion equation with an effective surface potential deduced from the fully three-dimensional one and which involves the diagonalization of a one-dimensional Schrödinger operator. The overall problem is viewed as a two-dimensional drift-diffusion equation coupled to a Schrödinger-Poisson system. The latter is proven to be well posed by a convex minimization technique. A relative entropy and an a priori L 2 estimate provide sufficient bounds to prove existence and uniqueness of a global-in-time solution. In the case of thermodynamic equilibrium boundary data, a unique stationary solution is proven to exist. The relative entropy allows us to prove the convergence of the transient solution towards it as time grows to infinity. Finally, the low-order approximation of the relative entropy is used to prove that this convergence is exponential in time.

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Section: Introduction and Main Resultsmentioning

confidence: 99%

Diffusive Transport of Partially Quantized Particles: Existence, Uniqueness and Long-Time Behaviour

Abdallah¹,

Méhats²,

Vauchelet³

2006

Proceedings of the Edinburgh Mathematical Society

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“…The 2D solutions of the Schrödinger equation are obtained in each cross-section along the gate length of the simulated transistor. The 2D Schrödinger equation is solved in an effective mass approximation [19][20][21][22][23][24][25]. The charge distribution obtained from the solutions of the 2D Schrödinger equation is used to calibrate the effective quantum-corrected potential in DD module.…”

Section: Simulation Methodologymentioning

confidence: 99%

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

Al-Ameri

Georgiev

Sadi

et al. 2017

Solid-State Electronics

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Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016 This is the author's final accepted version.There may be differences between this version and the published version. You are advised to consult the publisher's version if you wish to cite from it.http://eprints.gla.ac.uk/133442/ Deposited on: 04 January 2017 Enlighten -Research publications by members of the University of Glasgow http://eprints.gla.ac.uk 1  Abstract-In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations <110> and <100> and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90 o on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5nm, 6nm, 7nm and 8nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions.

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“…Theoretical analysis of double-gate (DG) transistors dates back to 1967 [5], about the same time as bulk MOSFET models. Since 1980's many alternatives to the conventional bulksilicon MOSFET have been proposed and developed, such as the silicon-on-insulator (SOI) and double-gate MOSFETs [6][7][8][9][10]. Theoretically, this type of "generic" MOSFETs has a different boundary condition from bulk MOSFET due to the back-gate oxide.…”

Section: Introductionmentioning

confidence: 99%

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

Zhu¹,

Yan²,

Xu³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

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Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

Cited by 713 publications

References 3 publications

Diffusive Transport of Partially Quantized Particles: Existence, Uniqueness and Long-Time Behaviour

Diffusive Transport of Partially Quantized Particles: Existence, Uniqueness and Long-Time Behaviour

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

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