Double-Gate Modulated Corbino TFTs

Choe, Younwoo; Lee, Suhui; Billah, Mohammad Masum; Mativenga, Mallory; Jang, Jin

doi:10.1109/led.2016.2589967

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…The exact t IGZO at which bulk accumulation (BA) in DG TFTs starts to occur is very difficult to establish as it is not only dependent on t IGZO , but also dependent on the quality of gate insulator/active layer interface, bulk traps, and bias condition. For the fabrication process herein, however, TCAD simulation of the electron concentration from the top and bottom surface of the a-IGZO channel indicated that t IGZO < 25 nm results in BA [14]. Therefore, small I D changes are observed for t IGZO > 20 nm.…”

Section: P-76 / M M Billahmentioning

confidence: 94%

P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

Billah

Hasan

Jeong

et al. 2017

Symp Digest of Tech Papers

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We studied the effect of a‐IGZO thickness (tIGZO) on device uniformity and drain current (ID) of a‐IGZO thin‐film‐transistors (TFTs) driven by the single gate (SG) and dual‐gate driving (DG‐driving). Numerical simulation using fitting density‐of‐states (DOS) exhibits ~5 times larger ID and excellent uniformity with DG‐driving TFTs for a‐IGZO tIGZO<20 nm than SG‐TFT and enables the opportunity of high yield backplanes using DG‐TFTs for next generation high‐performance display applications.

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Section: P-76 / M M Billahmentioning

confidence: 94%

P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

Billah

Hasan

Jeong

et al. 2017

Symp Digest of Tech Papers

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“…That's why we tried to increase the output resistance by using Corbino-TFT. [9]. We made the driving transistor and the load transistor the same condition so that the two transistors meet in the saturation region.…”

Section: Corbino-tftmentioning

confidence: 99%

56‐3: Student Paper: An Amplifier with Higher Gain Using Corbino—TFTs

Lee

Mativenga

et al. 2021

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In this paper, an amplifier circuit using oxide TFTs for amplifying brain signal is proposed. The proposed circuit is largely composed of two TFTs. It consists of a driving transistor that receives an input and a load transistor that determines the voltage gain through interaction with the driving transistor. Based on depletion load inverting amplifier, we analyzed the small signal modeled circuit. By using a circular TFT called Corbino‐TFT, we were able to obtain a greater voltage gain. The measurement results were compared with the calculated voltage gain. In addition, to get a higher gain, method of connecting two amplifiers in series is presented and simulation results are also presented.

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“…Cross-sectional distributions of electron concentration showing evidence of volume accumulation, including the density of states parameters for the TCAD simulation, can be found in Ref. 43.…”

Section: Volume Accumulationmentioning

confidence: 99%

Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability

Mativenga

Lim

Haque

et al. 2020

Jpn. J. Appl. Phys.

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Negligible threshold-voltage shift is reported for oxide thin-film transistors (TFTs) under high current (3 μA) and tensile bending stress (2 mm radius). The good stability is attributed to a circular TFT structure with electrically shorted top and bottom gates, and a polyimide substrate embedded with carbon-nanotubes for mechanical support and damage-free detachment from carrier glass. The circular structure leads to uniform electric field distribution across the channel, hard saturation in output characteristics, independence from tensile bending direction-related degradation, as well as isolation of the channel from stress concentrated points, which arise from local electric-field crowding at sharp corners or channel edges. The double-gate topology increases gate-drivability and achieves volume-accumulation, which minimizes the influence of defects at the channel surface and slight variations in carrier concentration during stress. Furthermore, the presence of two gates slightly shifts the location of the neutral bending plane towards the oxide semiconductor, thereby significantly reducing strain.

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Double-Gate Modulated Corbino TFTs

Cited by 4 publications

References 21 publications

P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

56‐3: Student Paper: An Amplifier with Higher Gain Using Corbino—TFTs

Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability

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