P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

Abstract

We studied the effect of a‐IGZO thickness (tIGZO) on device uniformity and drain current (ID) of a‐IGZO thin‐film‐transistors (TFTs) driven by the single gate (SG) and dual‐gate driving (DG‐driving). Numerical simulation using fitting density‐of‐states (DOS) exhibits ~5 times larger ID and excellent uniformity with DG‐driving TFTs for a‐IGZO tIGZO<20 nm than SG‐TFT and enables the opportunity of high yield backplanes using DG‐TFTs for next generation high‐performance display applications.

Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature

“…by heating the mixed In 2 O 3 , Ga 2 O 3 , and ZnO at 1450 °C, or by depositing a-IGZO film on a ZnO precursor layer with annealing above 700 °C [12][13][14][15], inducing higher cost and complexity in the fabrication of sc-IGZO TFTs. With the miniaturization development of TFTs, the thickness of active layer (IGZO) significantly decreased, numerically to a few nanometers (<10 nm) [16]. Since interface between IGZO and electrodes could directly influence the carrier mobility and threshold voltage of TFTs [17], the surface crystalline IGZO (ssc-IGZO) thin film was proposed to achieve a similar performance as the sc-IGZO film.…”