Double-fused 1.52-μm vertical-cavity lasers

Abstract

We demonstrate a novel long-wavelength vertical-cavity laser structure employing two AlAs/GaAs mirrors and a strain-compensated InGaAsP quantum-well active region. The lasers have been fabricated by wafer fusion and have the lowest room-temperature pulsed threshold current density of 3 kA/ cm2 at 1.52 μm. Eight laser sizes ranging from 9 to 60 μm were fabricated with threshold currents as low as 12 mA. Single transverse mode operation was observed on the 9 μm device, while other devices lased multimode. The maximum pulsed output power was 7 mW.

<title>Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials</title>

“…This program obtains j(r, z) (see Fig. 2) and w5(r, z) from (6). After adding the other heat sources, (1) is solved.…”

Electrical modeling of the GaAs/InP wafer bonded heterojunction

“…Therefore light emitting and absorbing devices can be designed using the combination of different III-V materials such as GaAs and InP with compatible but different properties. For instance, double-bonded vertical cavity laser structure (VCLs), where a quantum-well active region is sandwiched between a n-type and a p-type epitaxial mirror were designed [5,6]. In optoelectronics integrated circuits (OEICs), the direct wafer bonding technique is used to increase the performances of laser devices by localizing a high density of dislocations at the interface [7].…”

Reduction of thermal conductivity in wafer-bonded silicon

“…[1][2][3][4][5][6][7][8][9] In this work, we will describe reductions in thermal conductivity in bulk silicon achieved by bonding a stack of thin wafers as illustrated in Fig. 1(a), in which numerous nanometer air gaps 10 in the bonded interface were used for impeding normal heat flow.…”