Abstract:The electrical behavior of wafer bonded heterojunctions is usually modeled with the assumption of a pure thermionic conduction at the interface. In this paper, we study the case of highly doped bonded wafers using a Technology Computer Aided Designed (TCAD) modeling approach. Several plausible options of interface including fixed surface charges, interface states densities or a defective interface layer, are discussed and compared with current‐voltage measurements. Considering both thermionic and tunnel transp… Show more
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