Double-Barrier β-Ga₂O₃ Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

“…DBSBDs have a high breakdown voltage of 630 V, compared to 480 V for Ni SBDs. Low reverse leakage current due to high SBH of PtO x was credited for the DBSBDs’ high performance …”

“…Xiong et al 288 demonstrated the double-barrier Schottky barrier diode (DBSBD) strategy to minimize the edge leakage current. They fabricated the DBSBDs using Ni and PtO x circular electrodes having different diameter ratios (D Ni /D PtO x ) on HVPE-grown (001) β-Ga 2 O 3 epilayers.…”

“…Low reverse leakage current due to high SBH of PtO x was credited for the DBSBDs' high performance. 288 Electrical power conversion is an everyday necessity. In this regard, Zhou et al 289 demonstrated the use of a unified SPICE Reverse recovery times of 20−30 ns were observed from many β-Ga 2 O 3 vertical Schottky rectifiers switching characteristics.…”

Recent progress on the effects of impurities and defects on the properties of Ga2O3

“…The ohmic contact between Ti/Au and Ga 2 O 3 is formed by rapid thermal annealing (RTA) in a N 2 atmosphere in the range of 450-500 1C. 107,180,181 Because the O atoms located at the Ti-Ga 2 O 3 interface upon annealing in the absence of oxygen can spread into Ti contacted with Ga 2 O 3 to form TiO x , the interface at Ga 2 O 3 forms lots of V O s. This reduces the contact barrier located at the interface of Ga 2 O 3 , enabling easy formation of the ohmic contact. As for the non-volatile storage area, e.g., resistance random access memory (RRAM), V O s are of great benefit for device applications.…”

Anomalous Temperature-Dependent Phonon Anharmonicity and Strain Engineering of Thermal Conductivity in β-Ga2O3

“…β-Ga 2 O 3 with an ultrawide band gap of 4.9 eV has a broad application prospect in gas detection, photoelectric detection, and power electronics. − However, the realization of β-Ga 2 O 3 -based high-performance devices is faced with two obstacles, including the lack of p-type β-Ga 2 O 3 materials and the low lattice thermal conductivity κ of β-Ga 2 O 3 . − For instance, low κ may induce a serious self-heating effect, leading to an increase in channel temperature, a decrease in electron mobility, and a significant decrease in the cutoff frequency as the output power increases, which seriously hinder the application of β-Ga 2 O 3 in power electronics. Therefore, the pulse signal operation in the field-plated β-Ga 2 O 3 metal oxide semiconductor field-effect transistor (MOSFET) and the integration of high-κ materials including diamond and sapphire as substrates or heat transducers are proposed to enhance the heat dissipation rate of the β-Ga 2 O 3 -based devices. − …”