Double anti-reflection layers for silicon solar cells obtained by spin-on

Morales‐Acevedo, Arturo; Luna-Arredondo, E.J.; Santana, G.

doi:10.1109/pvsc.2002.1190516

Cited by 3 publications

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“…Methods developed to maximize the optical absorption in silicon solar cells through surface texturization by acid or alkaline etch 14,15 are not applicable in thin film silicon solar cell because the etch-pitch dimension surpasses the film thickness. The application of antireflective coatings like TiO 2 , SiO 2 , etc., 16 alone may not suffice to increase the light generated current, because the necessity to increase the optical path length is not complied. Enhanced light trapping by grating structures of 500-700 nm pitch and 300-500 nm height on the front and/or back surfaces along with the use of appropriate reflector films and antireflective coatings considerably increases the light trapping and hence the J sc in thin film Si solar cells.…”

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Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells

Becerra

Nair

2011

J. Electrochem. Soc.

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Feasibility of combining p-type crystalline Si (c-Si) of 200–8000 nm in thickness with an n-type bismuth sulfide (Bi2S3) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (105 cm−1) of Bi2S3 results in a light-generated current density (JL ) of >20 mA/cm2 for a c-Si(200 nm)/Bi2S3(300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (Voc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi2S3 on (p) c-Si, Jsc is 3 mA/cm2; Voc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm2, 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb2S3 (40 nm) thin film as an antireflective coating on Bi2S3, produced: Jsc of 10 mA/cm2; Voc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: Jsc of 26 mA/cm2; Voc of 600 mV; and η of 10%.

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