Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells

Abstract

Feasibility of combining p-type crystalline Si (c-Si) of 200–8000 nm in thickness with an n-type bismuth sulfide (Bi2S3) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (105 cm−1) of Bi2S3 results in a light-generated current density (JL ) of >20 mA/cm2 for a c-Si(200 nm)/Bi2S3(300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (Voc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi2S3 on (p) c-Si, Jsc is 3 mA/cm2; Voc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm2, 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb2S3 (40 nm) thin film as an antireflective coating on Bi2S3, produced: Jsc of 10 mA/cm2; Voc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: Jsc of 26 mA/cm2; Voc of 600 mV; and η of 10%.

Detailed photoluminescence study of vapor deposited films of different surface morphology

“…Determined band gaps reach from 1.2 to 2.0 eV and absorption coefficients of cm −1 in the visible region have been identified . So far, solar cells with either PbS or c‐Si () as p‐type layer lack efficiencies and have a rather low open‐circuit voltage meV compared to the band gap, indicating a loss of conversion efficiency either due to recombination via defects in the bulk or at the interfaces in the solar cell. It has been shown that can aggregate to nanowires, rods, flakes and flower‐like formations of stoichiometric and that the occurrence and shape depends on the substrate temperature during deposition, the deposition method or the layer thickness .…”

“…Bismuth sulfide () is a non‐toxic V–VI binary n‐type semiconductor and considered as a potential candidate for thin film solar cells . Determined band gaps reach from 1.2 to 2.0 eV and absorption coefficients of cm −1 in the visible region have been identified .…”

“…Bismuth sulfide () is a non‐toxic V–VI binary n‐type semiconductor and considered as a potential candidate for thin film solar cells . Determined band gaps reach from 1.2 to 2.0 eV and absorption coefficients of cm −1 in the visible region have been identified . So far, solar cells with either PbS or c‐Si () as p‐type layer lack efficiencies and have a rather low open‐circuit voltage meV compared to the band gap, indicating a loss of conversion efficiency either due to recombination via defects in the bulk or at the interfaces in the solar cell.…”

Systematic Variation of Material Characteristics with Chemical Composition in Antimony Sulfide Selenide Thin Films and Its Relevance to Solar Cell Performance

“…[ 10 ] In a thin film of 40 nm in thickness produced by thermal evaporation on unheated substrates, it is 2.8 eV. [ 11 ] In these cases, the films appear yellowish in transmitted daylight. Through crystalline thin films of the materials of the same thickness, the color is brownish‐red.…”

TiO2 photoanode sensitized with nanocrystalline Bi2S3: the effect of sensitization time and annealing on its photovoltaic performance

“…Among the different studies on Bi 2 S 3-based solar cells, many reports are on the thin film-based solar cells (Wang et al 2007;Moreno-García et al 2011;Becerra et al 2011) and photoelectrochemical solar cells (PEC) (Bhattacharya and Pramanik 1982;Mane et al 2007;Rajalakshmi et al 2013;Narayanan et al 2013;Jana et al 2009;Rath et al 2011). These days, Bi 2 S 3 has received considerable attention as an absorber in photovoltaic applications (Kamat 2008).…”