Doped Cu&lt;inf&gt;2&lt;/inf&gt;O/n-Si Heterojunction Solar Cell

Mukherjee, Rudra; Srivastava, Pranjal; Ravindra, Pramod; Avasthi, Sushobhan

doi:10.1109/pvsc.2018.8547485

Cited by 7 publications

(6 citation statements)

References 5 publications

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“…Cu 2 O is one representative hole-selective transport material, which possesses proper work function (∼5.0 eV), low electron affinity (χ) of 3.0 eV, and high hole mobility (80–256 cm 2 V –1 s –1 ) . To date, the reported power conversion efficiencies (PCEs) of Cu 2 O/ c -Si heterojunction solar cells − are still less than 10%, which may primarily be ascribed to the high interfacial trap density of state ( D it ), pinning the interfacial energy level . In this context, to reduce the interface defects, we insert a tunneling passivation layer between the silicon and the TMO, which acts like ultrathin SiO x in the TOPCon (tunnel oxide-passivated carrier-selective contact) solar cells .…”

Section: Introductionmentioning

confidence: 99%

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Zhou

et al. 2021

ACS Appl. Mater. Interfaces

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Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu 2 O) hole-selective contacts are demonstrated. The direct p-Si/Cu 2 O contact leads to a substoichiometric SiO x interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al 2 O 3 layer is subsequently employed at the p-Si/Cu 2 O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu 2 O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al 2 O 3 /Cu 2 O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.

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Section: Introductionmentioning

confidence: 99%

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Zhou

et al. 2021

ACS Appl. Mater. Interfaces

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“…The study of metal, silicon (Si) interactions, − and formation of interface is important owing to its application in the electronics and semiconductor industry. − With Si-based technologies still governing the integrated circuits, the Cu–Si system has been of particular importance in delivering promising applications from silicon bronzes to catalysis, − microelectronics, Li-ion batteries, , solar cells, − and more. Copper (Cu) with its low cost, low electrical resistivity (∼1.7 μΩ cm), high melting point (1357.6 K), and low diffusivity showed tremendous potential over aluminum for applications in the electronic devices such as Schottky junctions, metal gates and local interconnects …”

Section: Introductionmentioning

confidence: 99%

Intermediate Cu-O-Si Phase in the Cu-SiO₂/Si(111) System: Growth, Elemental, and Electrical Studies

et al. 2021

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We investigate here the strain-induced growth of Cu at 600 °C and its interactions with a thermally grown, 270 nm-thick SiO2 layer on the Si(111) substrate. Our results show clear evidence of triangular voids and formation of triangular islands on the surface via a void-filling mechanism upon Cu deposition, even on a 270 nm-thick dielectric. Different coordination states, oxidation numbers, and chemical compositions of the Cu-grown film are estimated from the core level X-ray photoelectron spectroscopy (XPS) measurements. We find evidence of different compound phases including an intermediate mixed-state of Cu–O–Si at the interface. Emergence of a mixed Cu–O–Si intermediate state is attributed to the new chemical states of Cu x+, O x , and Si x+ observed in the high-resolution XPS spectra. This intermediate state, which is supposed to be highly catalytic, is found in the sample with a concentration as high as ∼41%. Within the Cu–O–Si phase, the atomic percentages of Cu, O, and Si are ∼1, ∼86, and ∼13%, respectively. The electrical measurements carried out on the sample reveal different resistive channels across the film and an overall n-type semiconducting nature with a sheet resistance of the order of 106 Ω.

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“…Theoretically, the V oc of HCT solar cell can reach up to 900 mV and the PCE of 31% can be achieved. 4 At present, the research on the emitter of HCT solar cells can be divided into two parts, one is n-type semiconductor materials such as MoO x , 6-8 V 2 O x , [9][10][11][12] and WO x , 6,13 and the other is p-type semiconductor material represented by Cu 2 O x 14,15 and NiO x . 4,16-19 Among them, there are more research on MoO x and Cu 2 O x .…”

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confidence: 99%

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

Yang

Zhao

et al. 2023

ECS J. Solid State Sci. Technol.

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NiOx is a p-type semiconductor material with wide band-gap (3.6-4.0 eV) and good thermal and chemical stability. In terms of energy band structure, NiOx/n-Si possesses low valence band offset to allow holes and high conduction band offset to block electrons. NiOx is thus a promising hole-selective layer for n-type c-Si based heterojunction (HJT) solar cells. However, intrinsic NiOx suffers from low carrier concentration and poor conductivity, which severely limits its development in photovoltaics. This study aimed to obtain Ag-doped NiOx film with high carrier concentration and low resistivity by co-sputtering using high-purity Ag and NiOx target for high efficiency solar cells. The results show that appropriate Ag doping can increase the acceptor concentration of the film, promote the tunnelling effect, reduce interface recombination, and thus improve the device efficiency. When Ag content is 2.4%, the fill factor of Al/ITO/NiOx:Ag/SiOx/c-Si/SiOx/Al solar cell is increased from 52.97% to 68.42%, and the power conversion efficiency reaches 9.11%. Combined with the analysis of AFORS-HET simulation, the mechanism how Ag doping works in the hetrojunction is revealed.

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Doped Cu<inf>2</inf>O/n-Si Heterojunction Solar Cell

Cited by 7 publications

References 5 publications

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Intermediate Cu-O-Si Phase in the Cu-SiO₂/Si(111) System: Growth, Elemental, and Electrical Studies

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

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Doped Cu<inf>2</inf>O/n-Si Heterojunction Solar Cell

Cited by 7 publications

References 5 publications

Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer

Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3 Passivation Layer

Intermediate Cu-O-Si Phase in the Cu-SiO2/Si(111) System: Growth, Elemental, and Electrical Studies

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

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Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Interfacial Engineering of Cu₂O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al₂O₃ Passivation Layer

Intermediate Cu-O-Si Phase in the Cu-SiO₂/Si(111) System: Growth, Elemental, and Electrical Studies