Donors in hydride-vapor-phase epitaxial GaN

Freitas, Jaime A.; Moore, W. J.; Shanabrook, B. V.; Braga, G. C. B.; Lee, S.K; Park, S.S; Han, Jeong-Yeol; Koleske, D. D.

doi:10.1016/s0022-0248(02)01755-4

Cited by 27 publications

(18 citation statements)

References 22 publications

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“…[20], the 2ES spectra are dominated by recombination from [16]. To confirm our assigment of the emission bands associated with the pervasive donors in GaN films we carried out PL measurements on undoped and Si-doped GaN films deposited by OMCVD on the FS HVPE-GaN substrates [13]. The results are represented in Fig.…”

Section: Resultsmentioning

confidence: 68%

“…Special attention was taken to minimize the SIMS system impurity background and to find a reliable reference for each tested impurity. We measured the concentrations of C, Cl, H, O, Si, and S [13]. The Cl and S levels detected in our samples are 9.3 × 10 14 /cm 3 and 2 × 10 13 /cm 3 , respectively, and they are well below the measured carrier concentration.…”

Section: Resultsmentioning

confidence: 68%

“…To verify the validity of our assigment we plot the binding energies of the three donor-bound excitons (full circles), as determined from the spectral separation between the FX A line and each donor line represented in Fig. 1., versus the neutral donor binding energies, as measured by the FTIR [8,13]. This plot, represented in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Previous PL works have used the 2ES transition to measure shallow donor binding energies [18 -21]. However, incorrect assignments of the PL lines resulted in intracenter transition energies inconsistent with those measured by FTIR [13]. PL results for the 2ES region are presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Shallow donors in GaN

Freitas

Moore

Shanabrook

et al. 2003

Physica Status Solidi (b)

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PACS 71.55.Eq, 78.30.Fs, 78.55Cr, 78.66.Fd High-resolution, variable temperature PL experiments were performed in the spectral region associated with recombination processes involving the ground and excited states of the neutral donor bound excitons. High-resolution infrared measurements in combination with high-sensitive SIMS unambiguously identified Si and O shallow donors and yield their ground state binding energies. These binding energies are in excellent agreement with values obtained by the analysis of the two-electron-satellite PL spectra considering the participation of ground and excited state donor bound excitons. This work clarifies conflicting aspects existing in donor identification and the binding energies of the impurities and excitons.

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Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Shallow donors in GaN

Freitas

Moore

Shanabrook

et al. 2003

Physica Status Solidi (b)

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“…The HVPE method can achieve growth rates of up to 150 µm/hr with laser-assisted separation of the film from the sapphire substrate. There are many reports of the growth and characterisation of free standing conducting GaN wafers grown by HVPE, see for example references (Kelly et al 1999;Freitas et al 2002;Xu et al 2002).…”

Section: Gallium Nitridementioning

confidence: 99%

New materials for radiation hard semiconductor dectectors

Sellin

Vaitkus

2006

Nuclear Instruments and Methods in Physics Research Section A:

172

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We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 10 35 cm -2 s -1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material.

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Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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Donors in hydride-vapor-phase epitaxial GaN

Cited by 27 publications

References 22 publications

Shallow donors in GaN

Shallow donors in GaN

New materials for radiation hard semiconductor dectectors

Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures

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