Shallow donors in GaN

Freitas, Jaime A.; Moore, W. J.; Shanabrook, B. V.; Braga, G. C. B.; Koleske, Daniel; Lee, S. K.; Park, S. S.; Han, Jeong-Yeol

doi:10.1002/pssb.200303402

Cited by 13 publications

(8 citation statements)

References 24 publications

(31 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…24 The identity of these donors is not fully settled yet, but according to recent PL studies combined with high-resolution IR measurements and highly sensitive secondary ion mass spectroscopy data 25 we suggest the main donor (d 1 ) in our sample to be Si Ga , in consistence with the experience that this donor does not form complexes with the V Ga . 26 The weaker line d 2 may then be related to O N or another unidentified donor.…”

Section: B Optical Propertiessupporting

confidence: 67%

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova

Kasic

Larsson

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inTime-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy J. Appl. Phys. 111, 103518 (2012) Crack-free bulk-like GaN with high crystalline quality has been obtained by hydride-vapor-phase-epitaxy ͑HVPE͒ growth on a two-step epitaxial lateral overgrown GaN template on sapphire. During the cooling down stage, the as-grown 270-m-thick GaN layer was self-separated from the sapphire substrate. Plan-view transmission electron microscopy images show the dislocation density of the free-standing HVPE-GaN to be ϳ2.5ϫ10 7 cm Ϫ2 on the Ga-polar face. A low Ga vacancy related defect concentration of about 8ϫ10 15 cm Ϫ3 is extracted from positron annihilation spectroscopy data. The residual stress and the crystalline quality of the material are studied by two complementary techniques. Low-temperature photoluminescence spectra show the main neutral donor bound exciton line to be composed of a doublet structure at 3.4715 ͑3.4712͒ eV and 3.4721 ͑3.4718͒ eV for the Ga-͑N-͒ polar face with the higher-energy component dominating. These line positions suggest virtually strain-free material on both surfaces with high crystalline quality as indicated by the small full width at half maximum values of the donor bound exciton lines. The E 1 (TO) phonon mode position measured at 558.52 cm Ϫ1 ͑Ga face͒ by infrared spectroscopic ellipsometry confirms the small residual stress in the material, which is hence well suited to act as a lattice-constant and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications.

show abstract

Section: B Optical Propertiessupporting

confidence: 67%

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova

Kasic

Larsson

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Figure 2 shows the dependence of the electrical resistivity on boron composition in BGaN alloy, showing a strong increase of electrical resistivity directly related to the decrease of the n-type carrier concentration when increasing boron composition, while the mobility increases with boron content. The high carrier concentration for BGaN with boron composition less than 0.3% is attributed to background shallow donors such as silicon or oxygen commonly observed for MOVPE grown GaN layers [5].…”

Section: Methodsmentioning

confidence: 99%

Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy

Baghdadli

Hamady

Gautier

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

In this report, the electrical and structural properties of BGaN thin films, with boron composition up to 2%, have been investigated. The resistivity, Hall mobility and carrier concentration were measured by the van der Pauw/Hall Effect technique, using annealed indium ohmic contacts. The current‐voltage measurements between two planar gold and titanium/aluminum electrodes were performed. To analyze the structural properties, the polarized Raman spectra were measured with a micro‐Raman spectrometer. The resistivity displays a strong increase with respect to the boron composition in BGaN alloy, directly related to the decrease of the n‐type carrier concentration, while the mobility increases with boron content, well correlated to the structural measurements showing a good crystalline quality of the BGaN layers. This boron‐controlled resistivity is very promising for using the BGaN based materials in microelectronic and optoelectronic devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…It was originally identified as O N rather than Si Ga mainly on the basis of SIMS data, i.e., because these data show more O than Si in nearly all samples from Lab B [16]. However, as mentioned earlier, a SIMS measurement of a particular element, say O, includes all of that element, not just the substitutional fraction (O N in this case).…”

Section: Photoluminescence-donorsmentioning

confidence: 96%