Donor passivation in n-AllnAs layers by fluorine

Yamamoto, Yoshiyuki; Hayafuji, N.; Fujii, N.; Kadoiwa, K.; Yoshida, N.; Sonoda, T.; Takamiya, S.; Mitsui, S.

doi:10.1007/bf02666524

Cited by 26 publications

(6 citation statements)

References 5 publications

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“…In contrast, Te donor atoms reside on As sites. Our findings support the Yamamoto model, independent of the donor species and the sublattice in which they are substitutionally inserted [13]. We note that Tanabe et al were able to avoid F-deactivation in InP HEMTs by inserting Si delta doping in the center of a 20 Å mismatched AlGaAs layer [14].…”

Section: Resultssupporting

confidence: 88%

“…Yamamoto et al investigated the effects of fluorine on n-InAlAs (Si-and Sn-doped) and pInAlAs (Be-doped) [13]. They observed no evidence of acceptor passivation in the p-InAlAs but observed substantial deactivation and mobility degradation in both the Si-and Sn-doped nInAlAs.…”

Section: Resultsmentioning

confidence: 96%

“…An additional motivation for studying Te doping in InP HEMTs is the Si deactivation problem. Several studies have established that Si dopants in InAlAs layers can be deactivated by fluorine during normal processing [12][13][14][15][16]. This is a serious problem in InP HEMT fabrication.…”

Section: Introductionmentioning

confidence: 98%

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Growth of InP high electron mobility transistor structures with Te doping

Bennett

Suemitsu

Waldron

et al. 2005

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 96%

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Growth of InP high electron mobility transistor structures with Te doping

Bennett

Suemitsu

Waldron

et al. 2005

Journal of Crystal Growth

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“…5 Raman scattering, 6 and the eddy current. 7 InAlAs/InGaAs HFET structures, however, usually contain an n ϩ contact InGaAs layer 8 on the InAlAs barrier layers for nonalloy ohmic contact because the quality of the structures is easily affected by thermal degradation, such as fluorine contamination, 9,10 during annealing in the alloy process. The n ϩ contact InGaAs layer obstructs the nondestructive measurement of Ns in the channel layers by the above methods.…”

Section: Introductionmentioning

confidence: 99%

Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

Watanabe¹,

Yokoyama

1999

Journal of Applied Physics

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Comparative study of surface recombination in hexagonal GaN and ZnO surfaces J. Appl. Phys. 112, 063509 (2012) Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy J. Appl. Phys. 112, 063510 (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots J. Appl. Phys. 112, 063506 (2012) Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Appl. Phys. Lett. 101, 113108 (2012) Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on siliconThe sheet carrier concentration ͑Ns͒ of channel layers in modulation-doped InAlAs/InGaAs heterostructure field-effect transistor ͑HFET͒ structures with n ϩ InGaAs contact layers has been successfully and nondestructively determined using the room-temperature photoluminescence ͑PL͒ method. It is found that the spectral energy width between the maximum position of the main PL peak around 0.8 eV and the half-maximum position on the higher energy side has a good positive linear correlation with the Ns of the channel measured by the van der Pauw method. The scattering of the data is less than Ϯ3ϫ10 11 cm Ϫ2 . The determination of Ns is effective even if the HFET structures have not only n ϩ InGaAs contact layers but also layers for InAlAs Schottky level-shift diodes. From a comparison with low-temperature PL spectra, the main PL peak is attributed to the e 2 h transition in the quantum well of the channel. It is considered that the slope of the peak stretches further to the high energy as the Fermi energy in the channel become higher, i.e., as the Ns becomes larger.

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“…It is widely known that the fluorine inactivate donor of InAlAs layer. 9) This could be the most probable reason. Both the currents and g m of both samples in the voltage range below þ1 V are comparable to each other, but the 35 s sample shows much higher these values in the voltage range over þ1 V (over the flat band voltage).…”

Section: Performancementioning

confidence: 99%

Relaxation Behavior of Microbubbles in Ultrasonic Field

Karng¹,

Kwak

2006

jjap

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InAlAs was oxidized by UV and ozone process. Nanometer-order thin-oxide layers were generated in proportion to the square root of the process period, although their correlation with the period is poor compared with that of InGaAs. Oxidation initially decreased photoluminescence intensity from the InAlAs surface and then gradually increased it when the process period exceeded 15 min until it reached 4 h (crystallographic-order degradation followed by recovery). Plasma nitridation of InAlAs exhibited a gradual and monotonic decrease in photoluminescence intensity. Lattice-matched InAlAs/InGaAs metal-oxidesemiconductor high electron mobility transistors were fabricated utilizing gate oxide layers which were formed by 4 h oxidation. A transconductance of 200 mS/mm was obtained using a 1.5-mm-gate-length device, in a high-forward-gate-bias region although hysteresis was observed in the current-voltage curve.

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Donor passivation in n-AllnAs layers by fluorine

Cited by 26 publications

References 5 publications

Growth of InP high electron mobility transistor structures with Te doping

Growth of InP high electron mobility transistor structures with Te doping

Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

Relaxation Behavior of Microbubbles in Ultrasonic Field

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