Growth of InP high electron mobility transistor structures with Te doping

Bennett, B. R.; Suemitsu, Tetsuya; Waldron, Niamh; Alamo, J.A. del

doi:10.1016/j.jcrysgro.2004.12.070

Journal of Crystal Growth

2005

DOI: 10.1016/j.jcrysgro.2004.12.070

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Growth of InP high electron mobility transistor structures with Te doping

B. R. Bennett

Tetsuya Suemitsu

Niamh Waldron

et al.

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Cited by 3 publications

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References 18 publications

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“…We attempt to use tellurium (Te) as a doping material in the n-type AlGaN layer. Because the diffusion coefficient of Te is two orders of magnitude lower than Si, Te is commonly used as a n-type dopant in GaAs [10]. Te is also dopant that sits in a group V site, in contast to Si donors which occupy group III sites.…”

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Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te‐doped AlGaN cladding layer grown by mixed‐source HVPE

Jang

Kim

Hwang

et al. 2007

Phys. Status Solidi (c)

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The selective area growth (SAG) of AlGaN/InGaN/AlGaN light-emitting diodes (LEDs) is performed by mixed-source hydride vapor phase epitaxy (HVPE). The structure is grown on a n-GaN templated (0001) sapphire substrate. The SAG-double heterostructure (DH) is consisted of a Te-doped AlGaN cladding layer, an InGaN active layer, a Mg-doped AlGaN cladding layer, and a Mg-doped GaN capping layer. All of the epitaxial layers of LED structure are grown consecutively with a multi-sliding boat system. Roomtemperature electroluminescence (EL) characteristics show an emission peak wavelength of 400 nm with a full width at half-maximum (FWHM) of approximately 0.38 eV (at 20 mA). We find that the mixedsource HVPE method with multi-sliding boat system is possible to be one of the growth methods of IIInitride LEDs. HVPE is allowed the growth of low defect density material that incorporates a high proportion of aluminium (Al) in the AlGaN layers without severely degrading the crystal quality [4]. In addition, the HVPE process is also a "carbon-free" technology, as gaseous hydrogen chloride (HCl) used in the epitaxial layer growth provides an impurity self-cleaning effect. These result in low background material contamination, more efficient doping, and high internal quantum efficiency of radiative recombination in HVPE-LED structures [5]. However HVPE method is difficult to grow thin films and multilayer structures. Several attempts to grow multilayer structures by HVPE method have been reported. Lam et al. report that multilayer structure is grown by HVPE with multichannel gas distribution system [6].SAG is already well known to reduce the dislocation density by blocking the dislocation propagation from the substrate using the oxide mask [7][8][9]. Moreover, the SAG technique causes less damage and contamination than the dry etching.

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mentioning

confidence: 99%

Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te‐doped AlGaN cladding layer grown by mixed‐source HVPE

Jang

Kim

Hwang

et al. 2007

Phys. Status Solidi (c)

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Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

Bennett

Chick

Boos

et al. 2014

Journal of Crystal Growth

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A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

127

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Growth of InP high electron mobility transistor structures with Te doping

Cited by 3 publications

References 18 publications

Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te‐doped AlGaN cladding layer grown by mixed‐source HVPE

Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te‐doped AlGaN cladding layer grown by mixed‐source HVPE

Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

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