Donor-acceptor pair recombination in GaN

Dingle, R.; Ilegems, M.

doi:10.1016/0038-1098(71)90112-8

Cited by 270 publications

(108 citation statements)

References 11 publications

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“…The line at 3.27 eV and the series of LO phonon replicas at lower energies from sample No. 4 are attributed to recombination between shallow donors with E d Â30 meV and shallow acceptors with E a Â 200 meV based on previous work [24]. The broad emission at Â 3.0 eV from sample No.…”

Section: Resultssupporting

confidence: 55%

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Glaser

Carlos

Braga

et al. 2002

Materials Science and Engineering: B

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Section: Resultssupporting

confidence: 55%

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Glaser

Carlos

Braga

et al. 2002

Materials Science and Engineering: B

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“…This emission shifts monotonically to lower energies with decreasing excitation power densities (B11 meV with P exc : reduced from 1 to 0.001 W/cm 2 ). Based on these characteristics and previous work [21], this PL is attributed to a recombination between shallow Si donors (E d B30 meV) and shallow acceptors (E a B220 meV). Likely candidates for the shallow acceptors will be discussed shortly.…”

Section: Gan Homoepitaxial Layerssupporting

confidence: 70%

Magnetic resonance studies of defects in GaN with reduced dislocation densities

Glaser¹,

Freitas²,

Braga³

et al. 2001

Physica B: Condensed Matter

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“…known donor-acceptor pair recombination. 27 The photoluminescence measurements do not show either size effects or surface states, consistent with micron-scale, rather than nano-scale, crystallites. This is confirmed by scanning electron microscopy and a negligible amount of line broadening measured in the x-ray diffraction pattern ͑Fig.…”

mentioning

confidence: 58%

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Wallace¹,

Kim²,

Rose³

et al. 1998

Applied Physics Letters

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High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur. Here, high pressure alone is used as a starting point for carrying out rapid, self-propagating metathesis reactions. By initiating chemical reactions under pressure, crystalline phases, such as gallium nitride, can be synthesized which are inaccessible when initiated from ambient conditions. The single-phase gallium nitride made by metathesis reactions under pressure displays significant photoluminescence intensity in the blue/ultraviolet region. The absence of size or surface-state effects in the photoluminescence spectra show that the crystallites are of micron dimensions. The narrow lines of the x-ray diffraction patterns and scanning electron microscopy confirm this conclusion. Brightly luminescent thin films can be readily grown using pulsed laser deposition.

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Donor-acceptor pair recombination in GaN

Cited by 270 publications

References 11 publications

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Magnetic resonance studies of defects in GaN with reduced dislocation densities

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

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