Dominant Factors Influence the Bistability of Surface-Stabilized Ferroelectric Liquid Crystal Devices

Yang, K. H.; Chieu, T. C.

doi:10.1143/jjap.28.l1599

Cited by 31 publications

(10 citation statements)

References 3 publications

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“…10 It is also known that the use of high spontaneous polarization materials improves the switching rate but is detrimental to bistability. 11 The surface bistability is lost mostly due to an accumulation of free charges at the interface between the FLC medium and the insulating alignment layers, which depends on the nature of alignment layers.…”

Section: Introductionmentioning

confidence: 99%

Memory effect near transition temperature in Sm C∗ phase in nonsurface stabilized ferroelectric liquid crystals

Coondoo

Malik

Choudhary

et al. 2008

Journal of Applied Physics

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Memory behavior in the ferroelectric liquid crystal ͑FLC͒ material, Felix 17/100, has been investigated by electro-optical, dielectric, and hysteresis methods at different temperatures ranging from room temperature to near ferro-paraelectric phase transition. Memory effect has been observed in the studied material near the transition temperature in Sm C ‫ء‬ phase in the cells having thickness greater than the pitch value of the material. This is in contrast to the memory effect observed in conventional FLCs where thickness of the cell has to be less than the pitch value of the material. Electrical conductivity measurements elucidate that the steep increase in the conductivity near the transition temperature in Sm C ‫ء‬ phase enhances the motion of free ions and probably weakens the depolarization field in the material, thereby showing memory effect.

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Section: Introductionmentioning

confidence: 99%

Memory effect near transition temperature in Sm C∗ phase in nonsurface stabilized ferroelectric liquid crystals

Coondoo

Malik

Choudhary

et al. 2008

Journal of Applied Physics

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“…As a consequence, with 0 V applied to the FLC cell there will be a voltage of magnitude P S /( 1 2 c A + c F ) across the FLC layer that drives the FLC away from being fully switched (c F and c A are the FLC and alignment layer capacitances per unit area). The FLC switching threshold V T F must be high enough to resist this backswitching [12] voltage. Of course backswitching can be completely eliminated by using conductive rather than dielectric alignment layers [13].…”

Section: B Minimum Surface Strength For Bistability (Backswitching Lmentioning

confidence: 99%

Polarization-stiffened ferroelectric liquid crystals: A thickness-independent bistable switching voltage with a lower limit of about 2 V and the transition to thresholdless switching

O’Callaghan¹

2015

Phys. Rev. E

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Typical ferroelectric Sm-C(*) liquid crystal (FLC) cells exhibit a voltage threshold for switching from one stable state to another despite the FLC's response being inherently continuous and thresholdless (free rotation of the director around the tilt cone). This switching threshold is due to FLC-surface interactions and to the chevron smectic structure commonly formed in cells. It is shown here that the FLC electrostatic energy contribution ∼P(S)(2) responsible for thresholdless switching of high-P(S) FLCs also plays a key role in the bistable switching of lower-P(S) FLCs. Among the consequences are that it can be difficult to lower a cell's threshold below V(TB)∼3.4(B/ɛ(F))(1/2) (B and ɛ(F) are the FLC's elastic and dielectric constants), that a cell's threshold becomes independent of cell thickness once it substantially exceeds the characteristic length ξ(P)=(ɛ(F)B)(1/2)/P(S), and that there are conditions under which alignment layer capacitance can decrease rather than increase the threshold (i.e., transition to thresholdless switching). A model that predicts and explains these behaviors is presented along with threshold measurements of representative FLC cells.

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“…On the contrary, at high P s , depolarizing fields appear in FLC cells, suppressing the bistability if the aligning layers are thick enough. 4 Therefore, extremely thin aligning layers are necessary for the development of a passively addressed FLCD having gray scale. One of the aligning layers can be removed, providing the best quality for the FLC layer photoalignment, 5 but such an asymmetry of the boundary conditions provides asymmetry of the energy of the FLC anchoring with boundaries.…”

Section: Introductionmentioning

confidence: 99%

Passively addressed FLC display possessing an inherent gray scale and memory

Pozhidaev¹,

Chigrinov²,

Bobilev³

et al. 2006

J Soc Info Display

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Abstract— A passively addressed 64 × 64 ferroelectric liquid‐crystal display (FLCD) has been developed. The display matrix has a 33 × 33 mm2 aperture, and the FLC layer thickness is 5.2 ± 0.2 μm. The display device operates with a frame frequency of 30 Hz (at Vrow = ±18 V, Vcol = ±9 V, T = 23°C), generating a continuous gray scale which can be memorized for more than 10 days after the driving voltage is switched off. A new approach for multiplex electronic addressing of the FLCD gray scale is proposed. The conditions of the hysteresis‐free gray‐scale generation for multiplex addressing and the gray‐scale memorization after the voltage is switched off, as well as the time steadiness of memorized images, are considered.

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Dominant Factors Influence the Bistability of Surface-Stabilized Ferroelectric Liquid Crystal Devices

Cited by 31 publications

References 3 publications

Memory effect near transition temperature in Sm C∗ phase in nonsurface stabilized ferroelectric liquid crystals

Memory effect near transition temperature in Sm C∗ phase in nonsurface stabilized ferroelectric liquid crystals

Polarization-stiffened ferroelectric liquid crystals: A thickness-independent bistable switching voltage with a lower limit of about 2 V and the transition to thresholdless switching

Passively addressed FLC display possessing an inherent gray scale and memory

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