Domain Walls in Thin Ni–Fe Films

Middelhoek, S.

doi:10.1063/1.1729367

Cited by 232 publications

(83 citation statements)

References 16 publications

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“…9,23 In Figure 2(b), the domain wall region is shown, revealing a local domain wall structure, which resembles a cross-tie wall. 24 The ferromagnetic origin of the observed domain structure was confirmed by heating the sample above the Curie temperature, upon which the domain contrast disappeared.…”

Section: -4mentioning

confidence: 83%

Crystalline symmetry controlled magnetic switching in epitaxial (111) La_0.7Sr_0.3MnO₃ thin films

et al. 2015

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Section: -4mentioning

confidence: 83%

Crystalline symmetry controlled magnetic switching in epitaxial (111) La_0.7Sr_0.3MnO₃ thin films

et al. 2015

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“…This behavior is found experimentally [27]- [29] and only basic features can be modeled theoretically [27,28]. For a given film thickness, the experimentally found dependency of λ ct with anisotropy of a single F layer is…”

Section: Introductionmentioning

confidence: 86%

Domain wall asymmetries in Ni₈₁Fe₁₉/NiO: proof of variable anisotropies in exchange bias systems

McCord¹,

Schäfer

2009

New J. Phys.

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View the article online for updates and enhancements. Abstract. Multiple changes in the internal structure of magnetic domain walls due to alterations of the interfacial coupling across the ferromagnetic/ antiferromagnetic interface are reported for Ni 81 Fe 19 /NiO exchange coupled films. Depending on the antiferromagnetically induced anisotropy, three different types of domain walls are observed. Cross-tie domain wall structures of decreased vortex to anti-vortex spacing develop with the addition of a thin antiferromagnetic layer. For exchange biased samples strong asymmetries in domain wall structure occur for the ascending and descending branch of the magnetization loop. For the descending branch a symmetric 180 • Néel wall develops, whereas a folded cross-tie domain wall structure forms during magnetization reversal along the ascending loop branch. The novel type of 'zigzagged' cross-tie wall is characterized by cross-ties reaching differently into the surrounding domain areas. The wall alterations indicate the existence of bi-modal coupling strengths in exchange coupled systems, which is in accordance with models of exchange bias that assume pinned and unpinned spins at the ferromagnetic/antiferromagnetic interface.

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“…In the case of the cross-tie wall, the cross ties serve to decrease the demagnetizing energy and are imaged by the conventional Bitter pattern technique and the Fresnel mode of TEM as bars perpendicular to the main wall [35][36][37][38]. It has to be noted that observation of the cross-tie wall for 20 nm-thick films is quite unusual (mostly such wall type shows up for film thicknesses in the range 30-40 nm and is observed up to 100 nm).…”

Section: Resultsmentioning

confidence: 99%

Investigation of thermally evaporated nanocrystalline thin cobalt films

et al. 2017

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structures are of large importance. From the practical point of view, they are very significant for tailoring of the specimens with the required properties. In particular, they allow to develop high-density magnetic and magneto-optic recording media, modern recording heads, high-performance permanent magnets, magnetic sensors, and transformer steel sheets [1,2]. The knowledge of the magnetic domain behavior in relation to the morphological structure of the specimens is also important for theoretical modeling of magnetic properties [1,2].Thin magnetic films attract large attention from the fundamental as well as technological point of view. On the fundamental side, they exhibit different magnetic properties, such as magnetic anisotropy [3], magnetic microstructure [4], coercivity [5], and magnetoresistance [6], depending on their thickness, composition, crystalline structure, and preparation conditions. From the technological point of view, thin magnetic films have a number of applications; for example, they are used in magnetic information storage media, magneto-optic recording media, magnetic devices, and sensors [1,2].In particular, cobalt thin films have been the subject of wide and intense study in recent years. They can be prepared by various techniques, for example by sputtering, thermal evaporation, electron beam evaporation, molecular beam epitaxy, pulsed laser deposition, electrodeposition, and chemical vapor deposition [7][8][9]. The obtained films are usually nanocrystalline in nature and possess specific, improved mechanical, physical, magnetic, and chemical properties in comparison with conventional microcrystalline counterparts. Depending on the film thickness as well as the preparation method and conditions used, cobalt thin films exhibit a wide range of morphological and magnetic properties, and especially various magnetic domain structures with inplane and outofplane magnetization [10][11][12][13]. AbstractIn this paper, a study has been made of nanocrystalline thin cobalt films with thicknesses in the range from 10 to 60 nm. The films were thermally evaporated at incidence angle of 0° in a vacuum of about 10 − 5 mbar. The morphological structure of the films consists of nanocrystalline grains regular in shape and densely packed. As the film thickness is increased from 10 to 60 nm, the average grain size increases from 22.0 to 28.9 nm. The films crystallize mainly in the hexagonal close-packed phase of cobalt. The magnetic structure is composed of domains. In films with thicknesses in the range from 10 to 40 nm, the domains are magnetized in the plane of the film, while films with thicknesses of 50 and 60 nm possess both inplane and perpendicular magnetization components. The domains with inplane magnetization are irregular in shape and typically from a few to 10 mm in size, whereas the domains with perpendicular magnetization form a fine maze stripe pattern of the order of 100 nm in width.

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Domain Walls in Thin Ni–Fe Films

Cited by 232 publications

References 16 publications

Crystalline symmetry controlled magnetic switching in epitaxial (111) La_0.7Sr_0.3MnO₃ thin films

Crystalline symmetry controlled magnetic switching in epitaxial (111) La_0.7Sr_0.3MnO₃ thin films

Domain wall asymmetries in Ni₈₁Fe₁₉/NiO: proof of variable anisotropies in exchange bias systems

Investigation of thermally evaporated nanocrystalline thin cobalt films

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Domain Walls in Thin Ni–Fe Films

Cited by 232 publications

References 16 publications

Crystalline symmetry controlled magnetic switching in epitaxial (111) La0.7Sr0.3MnO3 thin films

Crystalline symmetry controlled magnetic switching in epitaxial (111) La0.7Sr0.3MnO3 thin films

Domain wall asymmetries in Ni81Fe19/NiO: proof of variable anisotropies in exchange bias systems

Investigation of thermally evaporated nanocrystalline thin cobalt films

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Crystalline symmetry controlled magnetic switching in epitaxial (111) La_0.7Sr_0.3MnO₃ thin films

Crystalline symmetry controlled magnetic switching in epitaxial (111) La_0.7Sr_0.3MnO₃ thin films

Domain wall asymmetries in Ni₈₁Fe₁₉/NiO: proof of variable anisotropies in exchange bias systems