The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn3GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn3GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.

In crystalline thin film growth of a prerequisite is substrate surfaces with stable and uniform structure and chemical composition. Various substrate treatments were used to obtain

We report on the stability of the La0.7Sr0.3MnO3 thin film surface when deposited on (111)-oriented SrTiO3. For ultrathin La0.7Sr0.3MnO3 films, an initial 3-dimensional morphology is observed, which becomes 2-dimensional with increasing film thickness. For even thicker samples, we show that the surface morphology evolves from 2-dimensional to 3-dimensional and that this observation is consistent with an Asaro-Tiller-Grinfeld instability, which can be controlled by the deposition temperature. This allows for synthesis of films with step-and-terrace surfaces over a wide range of thicknesses. Structural characterization by x-ray diffraction and transmission electron microscopy shows that the films are strained to the SrTiO3 substrate and reveals the presence of an elongated out-of-plane lattice parameter at the interface with SrTiO3.

The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) μV K −1 at room temperature. Our results demonstrate that IrMnbased magnetic devices could harvest the heat dissipation for magnetic sensors, thus contributing to the Power-of-Things paradigm.