DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C

Abstract

It is observed by means of DLTS that in the case of Czochralski‐p‐Si deep levels with Ex–Ev = = 0.4 to 0.6 eV can be introduced due to longer heat treatment at temperatures in the region 600 to 900 °C. A detailed kinetics study is given of these deep level defects in dependence on the oxygen and carbon concentration. Attempts are made to correlate the DLTS data with TEM results to obtain information on the relationship between the deep levels and the structural defects, formed due to oxygen precipitation. The experimental results suggest that the deep levels are related to a large supersaturation of Si‐interstitials achieved by the growth of oxygen precipitates, leading also to the begin of secondary defect formation.

Characterization of point defects in ZnO thin films by optical deep level transient spectroscopy

“…if E4 is situated near charged dislocations. Inhomogeneous broadening of DLTS signals is known in alloy 34 and pure semiconductors 35–37. Varying the width of a Gaussian distribution (with E4 concentration as the ‘ y ‐axis’ and ${\sigma} _{{\rm n}}^{{\rm th}} /{\langle} {\sigma} _{{\rm n}}^{{\rm th}} {\rangle} $ as the logarithmically scaled ‘ x ‐axis’), we were able to compute a thermal DLTS peak which matches the right side of the measured peak closely (Fig.…”

Magnetic susceptibility of n- and p-Si single crystals containing thermodonors

“…According to [4], this type of TA is related with the dislocation dipoles that appear near ribbon-like precipitates. As determined by DLTS methods, a whole series of TA-centers with E TA -E V ≈ 0.4-0.6 meV appears at 500-900 °C TT of oxygencontaining Si samples [5].…”

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

“…As another existence form of oxygen, oxygen precipitation generally occurs during the high-temperature process of CM-Si wafers. The recombination activity of oxygen precipitation mainly comes from the dangling bonds between the silicon interface and themselves, [64][65][66][67][68][69] similar to those on silicon wafer surface. In addition, lattice distortion caused by oxygen precipitation in the silicon substrate can lead to the generation of crystallographic defects, such as stacking faults, dislocations, etc., which could act as the main recombination centers.…”

“…In addition, lattice distortion caused by oxygen precipitation in the silicon substrate can lead to the generation of crystallographic defects, such as stacking faults, dislocations, etc., which could act as the main recombination centers. [67][68][69] In summary, oxygen precipitates are severe defects, and therefore, they should be carefully avoided during the cell fabrication process.…”