The magnetic field dependence of the magnetoresistance in nondegenerate n-Ge is experimentally and theoretically investigated. The conductivity component connected with the impurity scattering (uiY) is selected. Its magnetic field dependence in quantizing magnetic field is in accordance with theory.Es wird die Abhangigkeit des Magnetowiderstandes vom Magnetfeld fur nichtentartetes, n-leitendes Ge experimentell und theoretisch untersucht. Die mit Storstellenstreuung verkniipfte Leitfahigkeitskomponente (ubg) wird getrennt bestimmt. Ihre Abhkngigkeit vom Magnetfeld im quantisierenden Magnetfeld befindet sich in Ubereinstimmung mit der Theorie.

The formation and properties of thermodonors‐II (TD‐II, Tanneal = 650 °C) in Czochralski‐grown silicon crystals are studied experimentally (EPR, Hall effect) and theoretically. Additionally the energy level spectrum and the paramagnetic properties of TD‐II are investigated. A model of TD‐II is proposed, which takes into consideration the localization of electrons on crystalline potential fluctuations due to oxygen clusters. The model explains the presence of the quasicontinuous spectrum of TD‐II levels as well as the dependence of the depth of their location on the size of oxygen clusters. The g‐factor shift, asymmetry, anisotropy of the electron paramagnetic resonance (EPR) line width and spin relaxation characteristics of TD‐II, as well as the dependence of the parameters of centers on the duration of annealing, and the presence of acceptors introduced either through doping or γ‐irradiation of the specimens are also explained.

It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, d~~p thermal donors, during thermal annealing at T = 450 "C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements, electron spin resonance, and photoluminescence. Ha OCHOBaHHEl 3KCIIePIIMeHTaJIbHbIX pe3yJIbTaTOB, lI0JIyseHHbIX IIpH H3Y9eHEl El CBOfiCTB Tep-MOO6pa6OTaHHOrO IIpH 450 "c KHCJIOpOnCOnepXa~erO p-Si(B) C HCIIOJIb30BaHHeM KOMlIJleKCa MeTORHK (3++eKTa XOJlJIa, 3nP H @OTOJIIoMHHeCIJeHIJHM), CneJIaH BbIBOn 0 TOM, 9 T O IIpHMeCb 6opa IIpH TaKHX OTXElraX y9aCTByeT B 06pa30BaHHH 3JIeKTpH9eCKH aKTHBHbIX KOMIIJIeKCOB -rny60~11x TepMOJ(OHOpOB.

Thermally induced donors in Czochralski‐grown p‐Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed.

Thermally induced donors in Czochralski‐grown dislocation‐free phosphorus‐doped n‐Si crystals of different oxygen and carbon contents are investigated by different techniques. Hall effect within the temperature range 20 to 450 K, dependences of piezoresistance and Hall coefficient on uniaxial elastic deformation within the mechanical stress range 0 to 15000 kp/cm2 and electron paramagnetic resonance are used. The dependence of the donor behaviour on both, the heat treatment and the starting materials is studied. It is established that thermally induced donors at 450°C differ from donors, which are induced at 650°C, if not in their chemical composition then, at any rate, in their structure and, possibly, in their surrounding.