2016
DOI: 10.1109/tc.2015.2451660
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Disturbance Relaxation for 3D Flash Memory

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Cited by 12 publications
(5 citation statements)
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“…Apart from the above circuit-level or chip-level hardware-based approaches, some software-based approaches can provide one part of the solution to mitigate the program disturbance. Y.-M. Chang et al proposed a programming method by dividing one physical block into two logical sub-blocks (referred to as reliable blocks) [29]. The selected pages to form a reliable block are not adjacent with each other.…”
Section: Improvement Of the Program Disturbmentioning
confidence: 99%
“…Apart from the above circuit-level or chip-level hardware-based approaches, some software-based approaches can provide one part of the solution to mitigate the program disturbance. Y.-M. Chang et al proposed a programming method by dividing one physical block into two logical sub-blocks (referred to as reliable blocks) [29]. The selected pages to form a reliable block are not adjacent with each other.…”
Section: Improvement Of the Program Disturbmentioning
confidence: 99%
“…Previous studies such as [22,26,27,[30][31][32][33][34][35][36] mainly analyze the failure of flash-based devices such as read disturbance, write disturbance, and endurance. Such failures are commonly reported in chip and device levels.…”
Section: Related Workmentioning
confidence: 99%
“…19 Each page is logically divided into a large "user area," which stores the user data and a small "out-of-band" area, which stores mapping information, metadata (eg, erase counter and page state) and ECC. 20,21 Flash memory operations: Flash memory allows program (write), read, and erase operations, which are managed by the FTL. 22 Reads/writes happen at page granularity whereas erase happens at block granularity.…”
Section: Flash Memory Architecture and Operationsmentioning
confidence: 99%
“…Each page is logically divided into a large “user area,” which stores the user data and a small “out‐of‐band” area, which stores mapping information, metadata (eg, erase counter and page state) and ECC. ()…”
Section: Introductionmentioning
confidence: 99%