Distributed Feedback Lasers Based on MAPbBr<sub>3</sub>

Pourdavoud, Neda; Mayer, André; Buchmüller, Maximilian; Brinkmann, Kai Oliver; Häger, Tobias; Hu, Ting; Heiderhoff, R.; Shutsko, Ivan; Görrn, Patrick; Chen, Yiwang; Scheer, Hella-Christin; Riedl, Thomas

doi:10.1002/admt.201700253

Cited by 88 publications

(107 citation statements)

References 31 publications

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“…The average roughness of the AFM scans is displayed in Figure b. The optimum in device performance is found at 90 °C, which is in line with temperatures used for nanoimprinted perovskite layers . Here, the perovskite recrystallizes to very smooth layers with root mean square (RMS) roughness around 3.1 nm (see Figure a,b).…”

Section: Resultssupporting

confidence: 59%

Laminated Perovskite Photovoltaics: Enabling Novel Layer Combinations and Device Architectures

Schmager

Roger

Schwenzer

et al. 2020

Adv Funct Materials

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High‐efficiency perovskite‐based solar cells can be fabricated via either solution‐processing or vacuum‐based thin‐film deposition. However, both approaches limit the choice of materials and the accessible device architectures, due to solvent incompatibilities or possible layer damage by vacuum techniques. To overcome these limitations, the lamination of two independently processed half‐stacks of the perovskite solar cell is presented in this work. By laminating the two half‐stacks at an elevated temperature (≈90 °C) and pressure (≈50 MPa), the polycrystalline perovskite thin‐film recrystallizes and the perovskite/charge transport layer (CTL) interface forms an intimate electrical contact. The laminated perovskite solar cells with tin oxide and nickel oxide as CTLs exhibit power conversion efficiencies of up to 14.6%. Moreover, they demonstrate long‐term and high‐temperature stability at temperatures of up to 80 °C. This freedom of design is expected to access both novel device architectures and pairs of CTLs that remain usually inaccessible.

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Section: Resultssupporting

confidence: 59%

Laminated Perovskite Photovoltaics: Enabling Novel Layer Combinations and Device Architectures

Schmager

Roger

Schwenzer

et al. 2020

Adv Funct Materials

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“…Amplified spontaneous emission (ASE) and optically pumped lasing have been reported for MAPbI 3 and other hybrid organic–inorganic lead halide perovskites . As a result of the soft nature of this class of materials, photonic resonator structures can be directly patterned into MAPbX 3 (X = Br, I) by thermal nanoimprint to achieve low‐threshold optically pumped perovskite lasers …”

mentioning

confidence: 99%

Room‐Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films

et al. 2019

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Metal-halide perovskite semiconductors are of tremendous interest for a variety of applications. Only recently, solar cells based on a representative of this family have been certified with an efficiency in excess of 24%.[1] Aside from their remarkable success in photovoltaics, metal-halide perovskites are also highly promising as light emitters, e.g., in light-emitting diodes (LEDs) or lasers. [2][3][4] LEDs based on the fruit-fly of these compounds, i.e., methylammonium lead iodide (CH 3 NH 3 PbI 3 or MAPbI 3 ), and other related perovskites have been demonstrated with continuously increasing efficiency. [5][6][7] For lasers, there is the vision that perovskites may overcome/avoid the typical limitations and loss mechanisms present in organic gain media, such as triplet-singlet annihilation or absorption due to triplet excitons and Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs).Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.

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“…[1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics. [1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics.…”

mentioning

confidence: 99%

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Abzieher

Moghadamzadeh

Schackmar

et al. 2019

Advanced Energy Materials

137

149

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application-oriented research like process engineering and upscaling is observed. [1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics. Recently, power conversion efficiencies (PCEs) close to 24% were demonstrated for perovskite PV, exceeding the PCEs of established thinfilm technologies. [14] Despite the rapid progress in terms of PCE, one key challenge of perovskite-based PV is still its low stability under realistic outdoor stress conditions-temperature, humidity, and ultraviolet (UV) radiation. A significant advance toward more stable devices was demonstrated by engineering the composition of the large cation site of the perovskite crystal structure and by including low-dimensional perovskite interlayers and passivation layers. [15][16][17][18][19][20] Further advances in stability are based on the charge extracting materials and their interfaces with the perovskite absorber layers. [21][22][23] Most reported record PCEs are still based on highly expensive organic hole transport layer (HTL) materials like 2,2′,7,7′-tetrakis[N,N-di (4methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-MeOTAD) or poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). [20,24,25] Although these materials result in good performance on short High-quality charge carrier transport materials are of key importance for stable and efficient perovskite-based photovoltaics. This work reports on electron-beam-evaporated nickel oxide (NiO x ) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet-printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiOx hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all-evaporated perovskite solar cells employing an inorganic NiO x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron-beam-evaporated NiO x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all-evaporated perovskite solar mini-module with a NiO x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm 2 .

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Distributed Feedback Lasers Based on MAPbBr₃

Cited by 88 publications

References 31 publications

Laminated Perovskite Photovoltaics: Enabling Novel Layer Combinations and Device Architectures

Laminated Perovskite Photovoltaics: Enabling Novel Layer Combinations and Device Architectures

Room‐Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

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Distributed Feedback Lasers Based on MAPbBr3

Cited by 88 publications

References 31 publications

Laminated Perovskite Photovoltaics: Enabling Novel Layer Combinations and Device Architectures

Laminated Perovskite Photovoltaics: Enabling Novel Layer Combinations and Device Architectures

Room‐Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

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Distributed Feedback Lasers Based on MAPbBr₃