Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Genç, M.; Шеремет, В. Н.; Elçi, M.; Kasapoğlu, Ahmet Emre; Altuntaş, İsmail; Demir, İlkay; Eğin, G.; İslamoğlu, Serkan; Gür, Emre; Muzafferoğlu, N.; Elagöz, S.; Gülseren, Oğuz; Aydınlı, Atilla

doi:10.1016/j.spmi.2019.01.008

Cited by 13 publications

(7 citation statements)

References 17 publications

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“…Further, ITO was sandwiched between the reflection layer and the p-GaN to decrease the p-type contact resistance. On the other hand, DBR, instead of metallic mirrors, can be used as reflection layer [ 24 ]. For comparing the reflectance, Ni (1 nm)/Ag (150 nm), ITO (10 nm)/Ag (150 nm), ITO (10 nm)/ DBR (2.1 μm), and ITO (10 nm)/ Ag (150 nm)/ SiO 2 (300 nm)/ DBR (2.1 μm)/ SiO 2 (300 nm) films were deposited on the quartz glass.…”

Section: Resultsmentioning

confidence: 99%

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Fan²,

Sun

et al. 2021

Micromachines

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For high-power applications, it is important to improve the light extraction efficiency and light output of the vertical direction of LEDs. Flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection micro structure (CRS) were fabricated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs was increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact orifices. It exhibited markedly smaller optical degradation and thus higher device reliability as compared to normal Ag-based FCLED. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

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Section: Resultsmentioning

confidence: 99%

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Fan²,

Sun

et al. 2021

Micromachines

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show abstract

“…Further, ITO was sandwiched between the reflection layer and the p-GaN to decrease the p-type contact resistance. on the other hand, DBR instead of metallic mirrors as the same reflective properties [19] . For comparing the reflectance, Ni (0.1 nm)/Ag (150 nm), ITO (10 nm)/Ag (150 nm), ITO (10 nm)/ DBR (2.1 μm), and ITO (10 nm)/ Ag (150 nm)/ SiO2 (300 nm)/ DBR (2.1 μm)/ SiO2 (300 nm) films were deposited on the quartz glass.…”

Section: Resultsmentioning

confidence: 99%

Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

Xu¹,

Zhan²,

Sun³

et al. 2021

Preprint

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Improve the light extraction efficiency and light output in the vertical direction of LEDs for high-power applications, flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection structure (CRS) were fabricated. The enhanced opto-electrical properties were thoroughly investigated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs is increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact holes. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

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“…Among mentioned methods, RFMS and MOCVD growth methods are probably the only methods which are currently and effectively used in industry. Especially, MOCVD holds its position on all of the epitaxial growth of LEDs and laser diodes in all colors (blue, green, red) [14][15][16] and high power infrared laser diode industry [17]. On the other hand, RFMS growth methods are also leading many important coating industries.…”

Section: Large Area and Continues 2d Materials Growth Methodsmentioning

confidence: 99%

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Acar¹,

Gür²

2021

Turk J Phys

Self Cite

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Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS 2 , WS 2 , MoSe 2 and WSe 2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.

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Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Cited by 13 publications

References 17 publications

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

Sputtered 2D transition metal dichalcogenides: from growth to device applications

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