Dispersion effects in on‐state resistance of lateral Ga
 2
 O
 3
 MOSFETs at 300 V switching

Böcker, Jan; Tetzner, Kornelius; Heucke, Stephan F.; Hilt, Oliver; Bahat‐Treidel, Eldad; Dieckerhoff, Sibylle; Würfl, Joachim

doi:10.1049/el.2020.1286

Cited by 4 publications

(6 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The progress of these vertical Ga 2 O 3 rectifiers is fast, and various edge termination designs have been reported to achieve high V br . For transistors, the only ampere-class Ga 2 O 3 power transistor reported in the literature is the lateral Ga 2 O 3 MOSFET with a saturation current over 2.5 A and V br over 400 V. 17,18) Schematics of the Ga 2 O 3 vertical SBD, JBS diode and HJD, as well as lateral MOSFET, are shown in Fig. 1.…”

Section: Electrical Performancementioning

confidence: 99%

“…Static characteristics and switching performance of lateral Ga 2 O 3 MOSFET have also been investigated. 17,18) J. Böcker et al reported a large-area lateral Ga 2 O 3 MOSFET with a R on of 5 Ω and forward saturation current up to 2.5 A, as shown in Fig. 7(a).…”

Section: Switching Performance and Circuit Applicationsmentioning

confidence: 99%

“…Beyond the die-level, packaging has been applied to large-area Ga 2 O 3 devices and enabled a junction-to-case thermal resistance down to 0.5 °C W −1 . 16) Excellent switching characteristics such as fast switching speed 17,18) and minimal reverse recovery 19) have been achieved in power converters. Impressive surge-current 20) and overvoltage ruggedness 15) have been reported in large-area Ga 2 O 3 devices.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Qin

Wang

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Benefitted from progress on the large-diameter Ga2O3 wafers and Ga2O3 processing techniques, the Ga2O3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga2O3 power devices have emerged globally, and the scope of these works has gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga2O3 at a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state of the art of the ampere-class Ga2O3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.

show abstract

Section: Electrical Performancementioning

confidence: 99%

Section: Switching Performance and Circuit Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Qin

Wang

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…As devices under test (DUTs), commercially available discrete GaN Gate Injection Transistors (GIT) and research level chips of β-Ga2O3 normally-on MOSFETs on test substrates from Ferdinand-Braun-Institut, Berlin [6], were used. Both device types are lateral devices with gold bond wires, bonded on the edges of the chips.…”

Section: Devices Under Test and Test Setupmentioning

confidence: 99%

Power Cycling on Lateral GaN and β-Ga2O3 Transistors

Rugen

Brunko

Hoffmann

et al. 2023

MSF

View full text Add to dashboard Cite

The load cycling capability of novel power semiconductors is an important aspect when estimating their lifetime in field service. The Power Cycling Test (PCT) is the standard test to evaluate the lifetime of a semiconductor device under thermo-mechanical stress. PCTs are typically performed at temperature swings (ΔT) much higher than common operating conditions, to obtain results within a reasonable time. In this work, the PCT capability of gallium nitride (GaN) and gallium oxide (Ga2O3) lateral transistors is investigated. The GaN devices were tested in two groups with different ΔT. The temperature of the devices was monitored using two different temperature sensitive electrical parameters (TSEPs) and the accuracy of both methods was evaluated by comparing the results with the temperature, monitored by using an infrared (IR) camera. For Ga2O3 devices, no data on potential TSEP exists so far, thus, the typical TSEP for silicon (Si), silicon carbide (SiC) and GaN were investigated for their applicability to Ga2O3 devices. While a PCT was conducted on the devices, the temperature was also monitored using an IR camera. The results of the comparison of TSEP and IR camera data showed, that the accuracy of the TSEP for GaN matched either the temperature of the hottest spot on the chip (VDS method), or the average chip temperature (VGS method). For the Ga2O3 devices no suitable TSEP could be obtained and only the IR camera was used for the temperature measurement. It revealed a very uneven temperature and thus, current distribution on the chip. Furthermore, both GaN and Ga2O3 devices exhibit an outstanding power cycling capability with no failure after completing several millions of cycles. Considering the difference in Young’s Modulus of Si, GaN and Ga2O3, the PCT performance of GaN on silicon devices and Ga2O3 devices should be inferior to silicon devices. Thus, both device types, the GaN transistors and the Ga2O3 transistors, showed a PCT capability much higher than expected.

show abstract

“…Constructive methods have been proposed to minimize the SHE of β-Ga 2 O 3 MOS-FETs [12,13] , such as the ion-cutting technique [14] , transfer to a foreign substrate [15,16] and structural design [17] . Novel measurements have been used to characterize the transient temperature distribution of β-Ga 2 O 3 MOSFETs [18] . Most reports on β-Ga 2 O 3 -based MOSFETs have focused on pursuing high PFOMs and exploring novel structures, yet large-area structures are needed to sustain a high on-state current for practical applications.…”

Section: Introductionmentioning

confidence: 99%

A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect

Zhou¹,

Xu²,

Long³

2023

J. Semicond.

View full text Add to dashboard Cite

The self-heating effect severely limits device performance and reliability. Although some studies have revealed the heat distribution of β-Ga2O3 MOSFETs under biases, those devices all have small areas and have difficulty reflecting practical conditions. This work demonstrated a multi-finger β-Ga2O3 MOSFET with a maximum drain current of 0.5 A. Electrical characteristics were measured, and the heat dissipation of the device was investigated through infrared images. The relationship between device temperature and time/bias is analyzed.

show abstract

Dispersion effects in on‐state resistance of lateral Ga ₂ O ₃ MOSFETs at 300 V switching

Cited by 4 publications

References 19 publications

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Power Cycling on Lateral GaN and β-Ga<sub>2</sub>O<sub>3</sub> Transistors

A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect

Contact Info

Product

Resources

About

Dispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching

Cited by 4 publications

References 19 publications

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Power Cycling on Lateral GaN and β-Ga<sub>2</sub>O<sub>3</sub> Transistors

A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect

Contact Info

Product

Resources

About

Dispersion effects in on‐state resistance of lateral Ga ₂ O ₃ MOSFETs at 300 V switching

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect