Disordered small defect clusters in silicon

Ža̧sinas, E.

doi:10.3952/physics.v55i4.3231

Cited by 3 publications

(5 citation statements)

References 16 publications

(20 reference statements)

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“…It has been proposed that the inhomogeneous distribution of defects may result in static internal electric fields, created by permanently trapped charges [8,13,14]. In the overall neutral system, the lowest multipole moment is the dipole moment.…”

Section: Resultsmentioning

confidence: 99%

“…Point defects can essentially trap electrons or holes, while some are recombination centres. A non-homogeneous distribution of point defects after HE particle illumination creates defect clusters and local internal fields that affect the dynamics of the remaining charges on long distances [8]. A strong correlation between the type of defect clustering and the type of irradiation has been established [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…Experimentally determined recombination kinetics reveals charge recombination rates and demonstrates that the charge recombination time is directly proportional to the overall doze of irradiation [8]. It is not clear whether this variation of charge lifetime is due to the increase of overall defect density in the bulk or due to internal electric fields in the cluster.…”

Section: Introductionmentioning

confidence: 99%

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Stochastic theory of charge dynamics and recombination in defect clusters in bulk silicon

Abramavičius¹

2023

physics

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Various types of defect clusters are generated in bulk Si-based high-energy particle detectors. They become either recombination centres or charge trapping centres. Populated trapping centres create internal fields which may affect the dynamics and recombination of remaining free charges. In the semiclassical regime, the charge dynamics can be described by the Boltzmann equation. In this paper, the stochastic description is presented as an alternative to a direct solution of the Boltzmann equation approach. It is demonstrated that the hole dynamics can be described in the overdamped regime in both light-hole and heavy-hole cases. Electrons have to be described by including ballistic components. The theory allows an efficient simulation of the electron and hole dynamics in the vicinity of a defect cluster and demonstrates that local trapping centres are the major components enabling fast charge recombinations. The dipolar type internal fields of permanently trapped charges only weakly influence the charge recombination kinetics.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Stochastic theory of charge dynamics and recombination in defect clusters in bulk silicon

Abramavičius¹

2023

physics

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“…The determined concentration of dipoles in the samples irradiated up to 1•10 16 neutrons/cm 3 permits evaluation of the free carrier recombination centre capture cross-section. As the lifetime follows the relation [18,19] 1/τ = v thermal σM, (6) where v thermal is the electron thermal velocity, at 300 K equal to 10 7 cm/s [20], σ is the capture of free carrier cross-section and M is the concentration of recombination centres. Here and above we follow an approximation that 10 neutron/cm 2 fluence creates 10 cluster/cm 3 [1].…”

Section: Discussionmentioning

confidence: 99%

“…As the free carrier reciprocal lifetime linearly increases if the hadron fluence increases at least over six orders of magnitude, it shows the existence of recombination centres that rapidly capture electrons and holes. It was proposed [6,7] that the clusters could have the dipole properties which could also influence free carrier mobility. This was supported by imitating the damage created by a highenergy particle (HEP) after collision.…”

Section: Introductionmentioning

confidence: 99%

Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Mekys¹,

Vaitekonis²

2021

physics

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An increase of neutron irradiation fluence caused a decrease of Si radiation detector efficiency that was exceptionally well seen at 1017 neutron/cm2 fluence when the observed I–V characteristic of p-n junction under forward bias and under reverse bias became similar. Therefore the investigation of free carrier mobility could be a key experiment to understand the change of heavily irradiated silicon. The electron mobility was investigated by magnetoresistance means in microstrip silicon samples at temperature range T = 200–276 K. The analysis included the free carrier scattering by phonons, ionized impurities, dipoles and clusters and a contribution of each process was found by fitting the mobility dependence on temperature. The analysis of experimental data clearly demonstrated that the applied model did not explain the mobility in the samples irradiated to the highest fluence. Therefore a new concept of carrier transport is needed, and, as a conclusion, it could be stated that Si irradiated above 1016 cm–2 fluence (and up to 1020 cm–2) is a disordered material with the clusters.

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Influence of bacterial lipopolysaccharide on the degradation of the components of the extracellular matrix of rat biceps femoris muscle during high fructose diet-induced metabolic syndrome

Akimov¹,

Mykytenko²,

Mischenko³

et al. 2023

Fiziol Zh

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Metabolic syndrome is an epidemic of non-infectious origin, which is associated with the consumption of a large amount of high-calorie food and a sedentary lifestyle. It is not excluded that bacterial lipopolysaccharides (LPS) may enter the body during metabolic syndrome. The purpose of this work is to study the combined effect of bacterial lipopolysaccharide and high fructose diet on the concentration of glycosaminoglycans and their individual fractions, the content of free L-oxyproline and sialic acids in rat biceps femoris muscle. Bacterial LPS was injected intraperitoneally at a dose of 0.4 μg/kg. Metabolic syndrome was modelled by using 20% fructose solution as only source of drinking water. In the test group of animals total concentration of glycosaminoglycans increased by 22.53%, the heparin-heparan and keratan-dermatan fraction concentrations raised by 26.18 and 35.91%, but concentration of the chondroitin fraction did not change compared to the control. The concentrations of free L-oxyproline and sialic acids increased by 120.71 and 156.78%, respectively. Thus, high fructose diet, stimulation of the organism with bacterial lipopolysaccharide and their combination lead to increased degradation of glycoproteins and proteoglycans and intensify collagenolysis in the biceps femoris muscle of rats.

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Disordered small defect clusters in silicon

Cited by 3 publications

References 16 publications

Stochastic theory of charge dynamics and recombination in defect clusters in bulk silicon

Stochastic theory of charge dynamics and recombination in defect clusters in bulk silicon

Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

Influence of bacterial lipopolysaccharide on the degradation of the components of the extracellular matrix of rat biceps femoris muscle during high fructose diet-induced metabolic syndrome

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