Abstract:Various types of defect clusters are generated in bulk Si-based high-energy particle detectors. They become either recombination centres or charge trapping centres. Populated trapping centres create internal fields which may affect the dynamics and recombination of remaining free charges. In the semiclassical regime, the charge dynamics can be described by the Boltzmann equation. In this paper, the stochastic description is presented as an alternative to a direct solution of the Boltzmann equation approach. It… Show more
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