Disorder-induced Raman scattering in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NiSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Li, F.; Lustig, N.; Klosowski, P.; Lannin, J. S.

doi:10.1103/physrevb.41.10210

Cited by 31 publications

(17 citation statements)

References 10 publications

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“…2(a) means that the probe laser did not reach the wafer region. By referring to reported Raman data [6,7], the other signals derived from three kinds of nickel silicides; Ni 2 Si (100, 140 cm À1 ), NiSi (190, 215 cm À1 ) and NiSi 2 (260, 310, 370 cm À1 ). When observed from the Ni side ( Fig.…”

Section: Metal/sic Interface Reactionmentioning

confidence: 99%

Raman scattering characterization on SiC

Harima

2006

Microelectronic Engineering

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Section: Metal/sic Interface Reactionmentioning

confidence: 99%

Raman scattering characterization on SiC

Harima

2006

Microelectronic Engineering

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“…13͒ and no sharp phonon peaks have been observed, although due to the symmetry of the cubic cell ͑CaF 2 -structure͒ it has one allowed triply degenerate Raman active phonon. These peaks have been assigned to the disorder-induced Raman scattering, 14 which will be discussed later on. Under critical transition condition of 750°C, besides NiSi peaks at 196 and 214 cm −1 , we observe the appearance of diffuse, broad, although not intense peaks, which indicates that NiSi has begun to transform into NiSi 2 .…”

Section: Room-temperature Raman Measurementsmentioning

confidence: 99%

Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Karabko

Достанко

Kong

et al. 2009

Journal of Applied Physics

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We have demonstrated the effective Raman spectroscopy for the phase transition and phonon dynamics of NiPdSi films annealed at various temperatures. In addition to the appearance of alloy disorder-induced Raman peaks, we have shown that the presence of Pd in NiSi results not only in the retardation of NiSi2 phase transition to about 900 °C, but also in the redshift (∼3–4 cm−1) of the first-order Raman peaks. The observed Raman frequency downshift with increasing temperature can be described well by a model which has taken into account the contributions of the anharmonic, thermal expansion, and strain effects, revealing the dominant role of the phonon decay. Effects of Pd addition and annealing temperature on the Raman frequency and linewidth have been discussed. The introduction of Pd is found to reduce the Raman frequency downshift, demonstrating the favorable use of NiPdSi for microelectronics applications.

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“…1 may be associated to disorder-induced Raman scattering related to Si vacancies at the matrix/nanoparticles interfacial region. 21 The signal intensity at 248.9 cm −1 seems to saturate for samples thermally treated at 900°C, indicating that annealing at 900°C / 1 h is sufficient to achieve complete transition from ␥ phase to ␤ one. The TEM observations show that ␤-FeSi 2 nanoparticles are formed after thermal annealing and are localized at the SiO 2 / Si interface within the Si matrix, without any preferential orientation.…”

Section: Resultsmentioning

confidence: 94%

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

Lang

Amaral

Menêses

2010

Journal of Applied Physics

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We investigated the optical absorption of the fundamental band edge and the origin of the emission from β-FeSi2 nanoparticles synthesized by ion-beam-induced epitaxial crystallization of Fe+ implanted SiO2/Si(100) followed by thermal annealing. From micro-Raman scattering and transmission electron microscopy measurements it was possible to attest the formation of strained β-FeSi2 nanoparticles and its structural quality. The optical absorption near the fundamental gap edge of β-FeSi2 nanoparticles evaluated by spectroscopic ellipsometry showed a step structure characteristic of an indirect fundamental gap material. Photoluminescence spectroscopy measurements at each synthesis stage revealed complex emissions in the 0.7–0.9 eV spectral region, with different intensities and morphologies strongly dependent on thermal treatment temperature. Spectral deconvolution into four transition lines at 0.795, 0.809, 0.851, and 0.873 eV was performed. We concluded that the emission at 0.795 eV may be related to a radiative direct transition from the direct conduction band to an acceptor level and that the emission at 0.809 eV derives from a recombination of an indirect bound exciton to this acceptor level of β-FeSi2. Emissions 0.851 and 0.873 eV were confirmed to be typical dislocation-related photoluminescence centers in Si. From the energy balance we determined the fundamental indirect and direct band gap energies to be 0.856 and 0.867 eV, respectively. An illustrative energy band diagram derived from a proposed model to explain the possible transition processes involved is presented.

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Disorder-induced Raman scattering inNiSi2

Cited by 31 publications

References 10 publications

Raman scattering characterization on SiC

Raman scattering characterization on SiC

Phase transition and phonon dynamics in NiPdSi: An annealing study by temperature-dependent Raman spectroscopy

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

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