Raman scattering characterization on SiC

Harima, Hiroshi

doi:10.1016/j.mee.2005.10.037

Cited by 93 publications

(48 citation statements)

References 10 publications

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“…Raman spectroscopy has been approved to be an effective and simple tool for the characterization of polytypes, disorder, damages, and impurities properties of SiC [29][30][31]. The Raman scattering efficiency is relative high for SiC because of its strong covalent chemical bond.…”

Section: Raman Spectroscopy Analysis Of Rb-sicmentioning

confidence: 99%

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Zhang

et al. 2017

Int J Adv Manuf Technol

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Surface and subsurface damages appear inevitably in the grinding process, which will influence the performance and lifetime of the machined components. In this paper, ultraprecision grinding experiments were performed on reactionbonded silicon carbide (RB-SiC) ceramics to investigate surface and subsurface damages characteristics and formation mechanisms in atomic scale. The surface and subsurface damages were measured by a combination of scanning electron microscopy (SEM), atomic force microscopy (AFM), raman spectroscopy, and transmission electron microscope (TEM) techniques. Ductile-regime removal mode is achieved below critical cutting depth, exhibiting with obvious plow stripes and pile-up. The brittle fracture behavior is noticeably influenced by the microstructures of RB-SiC such as impurities, phase boundary, and grain boundary. It was found that subsurface damages in plastic zone mainly consist of stacking faults (SFs), twins, and limited dislocations. No amorphous structure can be observed in both 6H-SiC and Si particles in RB-SiC ceramics. Additionally, with the aid of high-resolution TEM analysis, SFs and twins were found within the 6H-SiC closed packed plane, i.e., (0001). At last, based on the SiC structure characteristic, the formation mechanisms of SFs and twins were discussed, and a schematic model was proposed to clarify the relationship between plastic deformation-induced defects and brittle fractures.

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Section: Raman Spectroscopy Analysis Of Rb-sicmentioning

confidence: 99%

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Zhang

et al. 2017

Int J Adv Manuf Technol

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“…The inset above the Raman spectrum of point 1 shows a small peak at 776 cm -1 which corresponds to the folded transverse optical (FTO) mode of 4H-SiC 17 and is therefore attributed to contribution from the substrate. Its appearance is expected in view of the fact that both 3C-and 4H-SiC are transparent for the exciting 633 nm laser beam, 18 and its gradual intensity increase from point 1 to point 14 is in line with the decreasing 3C-SiC layer thickness. The line observed at 767 cm -1 for points 8 and 14 corresponds to the FTO of 6H-SiC.…”

Section: Structural Defects Analysis In Thick 3c-sic Layersmentioning

confidence: 84%

“…In order to reduce the surface area of the terrace, two other shapes of the spacer opening were explored. The first one is the same squared opening as the original one, but rotated by 45 degrees (Figure 8b) with respect to the [11][12][13][14][15][16][17][18][19][20] direction. The idea for using such spacer is to form a small on-axis area at the corner of the substrate at which the nucleation begins.…”

Section: Geometrically Controlled Lateral Enlargementmentioning

confidence: 99%

“…10 The LE mechanism allows to localize the initial nucleation of 3C-SiC domains on an in situ formed large terrace with an on-axis area at the edge of hexagonal substrate. These domains enlarges along the step-flow [11][12][13][14][15][16][17][18][19][20] direction and completely cover the surface. It was shown that a reproducible growth of 3C-SiC layers without foreign polytype inclusions can be obtained using this approach.…”

Section: Introductionmentioning

confidence: 99%

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Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Jokubavičius

Yazdi

Liljedahl

et al. 2015

Crystal Growth & Design

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We investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the twostep growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements. ABSTRACTWe investigated the formation of structural defects in thick (~ 1mm) 3C-SiC layers grown on off-oriented 4H-SiC substrates via lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we 3 demonstrated that the two-step growth process combined with geometrically controlled lateral enlargement mechanism allows formation of single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution x-ray diffraction and low temperature photoluminescence measurements.

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“…It should be noted that Raman spectrum attained from the laser spot is not a true surface measurement, instead it is actually averaged over the penetration depth of the excitation beam [20,21]. The effective penetration depth (δ) can be evaluated by [20]:…”

Section: Raman Spectroscopy Of Triso Particle Layersmentioning

confidence: 99%

Evaluation of thermal conductivity of the constituent layers in TRISO particles using Raman spectroscopy

Cao

Liu

Wang

et al. 2017

Journal of the European Ceramic Society

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The thermal conductivity of individual layer in the tristructural-isotropic fuel particle was evaluated using Raman spectroscopy. In this method, laser acted simultaneously as an excitation source and a heating source. A three-dimensional point-heating model was developed to estimate the local temperature rise in the probing volume of the laser. The thermal conductivity can be evaluated based on the dependences of the Raman peak position on the temperature and laser power. The calculated thermal conductivities were 8.9±0.2 W/m·°C, 13.9±1.5 W/m·°C and 11.9±0.9 W/m·°C for the buffer, the inner and the outer PyC layers, respectively. Contrastly, the thermal conductivity of the SiC layer was 4.1 W/m·°C, which is much lower than the reference value, e.g. 168 W/m·°C reported by López-Honorato et al. (J. Nucl. Mater. 378(1) 35-39, 2008). The uncertainty of employing Raman spectroscopy to determine thermal conducitvity was discussed.

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Raman scattering characterization on SiC

Cited by 93 publications

References 10 publications

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

Evaluation of thermal conductivity of the constituent layers in TRISO particles using Raman spectroscopy

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