Dislocations in GaAs

Jacob, Guy; Farges, J.; Schemali, C.; Duseaux, M.; Hallais, J.; Bartels, W.; Roksnoer, P.J.

doi:10.1016/0022-0248(82)90480-8

Cited by 42 publications

(3 citation statements)

References 29 publications

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“…However, etch pits reappeared at the interface between the crystal and crucible wall in the shoulder part of the crystal (iii). While dislocations are known to propagate from a seed containing dislocations into a growing GaAs crystal [20], this was not observed in CdGeAs 2 . This is fortunate because the ''necking-in'' process used to prevent this problem for GaAs is difficult to implement in the horizontal gradient freeze method.…”

Section: Resultsmentioning

confidence: 76%

“…This is fortunate because the ''necking-in'' process used to prevent this problem for GaAs is difficult to implement in the horizontal gradient freeze method. The formation of dislocation etch pits at the shoulder of the boule, which is also observed in GaAs growth [20,21], seems to be due to the thermal stresses caused by the highly anisotropic thermal expansion of CdGeAs 2 and also its interaction with the crucible during cooling. Fig.…”

Section: Resultsmentioning

confidence: 94%

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Correlation between dislocation etch pits and optical absorption in CdGeAs2

Nagashio

Watcharapasorn

Zawilski

et al. 2004

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 94%

Correlation between dislocation etch pits and optical absorption in CdGeAs2

Nagashio

Watcharapasorn

Zawilski

et al. 2004

Journal of Crystal Growth

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“…First of all, low dislocation density substrates or dislocation-free substrates (78)(79)(80) are essential in order to avoid the propagation of the threading dislocations into the active layer during crystal growth. The elimination of growth-induced defects is very important.…”

Section: Table IV a Summary Of The Correlation Between The Formation ...mentioning

confidence: 99%

Degradation of III–V Opto‐Electronic Devices

Ueda

1988

J. Electrochem. Soc.

117

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The current status and understanding of various degradation phenomena in III–V opto‐electronic devices, especially, normalGaAs‐ and normalInP‐normalbased double‐heterostructure lasers and light emitting diodes, are reviewed. Three major degradation modes are focused as follows: rapid degradation due to recombination enhanced dislocation climb and glide, gradual degradation during operation over a long term, and accidental catastrophic degradation due to current surge. In each degradation mode, degraded regions are investigated structurally and/or compositionally. Based on these results, the degradation mechanisms are discussed and several methods for eliminating the degradation are also suggested.

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EPD investigation in LEC‐grown silicon‐doped gallium arsenide

Fornari¹,

Paorici²,

Zanotti³

1983

Cryst. Res. Technol.

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The EPD distribution is investigated in silicon-doped LEC-grown gallium arsenide crystals, 30 f 40 mni in mainbotly diameter and weighing within 300 t 500 grams. The silicondoping-dependent hardening effect, previously observed in S-doped and Bridgman grown silicon-doped gallium arsenide is here confirmed. The EPD decreasing with silicon-doping increase is observed to be less pronounced than in the case of S-doped and Bridgmarr grown silicon-doped samples and possible reasons for this different behaviour are diecussed. I n any case, a large microprecipitate density together with the EPD reduction appears as a clustering of shallow-pits around dislocation pits.

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Dislocations in GaAs

Cited by 42 publications

References 29 publications

Correlation between dislocation etch pits and optical absorption in CdGeAs2

Correlation between dislocation etch pits and optical absorption in CdGeAs2

Degradation of III–V Opto‐Electronic Devices

EPD investigation in LEC‐grown silicon‐doped gallium arsenide

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