Degradation of III–V Opto‐Electronic Devices

Ueda, Osamu

doi:10.1149/1.2095535

Cited by 117 publications

(20 citation statements)

References 45 publications

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“…In general, most of previous QW lasers on Si suffered from poor reliability and short lifetimes, impeding their practical application. The rapid degradation was attributed to the formation of dark line defects [89][90][91][92][93][94][95]. Fig.…”

Section: Lau Progress In Crystal Growth and Characterization Of Matmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

121

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: Lau Progress In Crystal Growth and Characterization Of Matmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

121

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“…This material has found its important application in making light emitting diodes (LED) and laser diodes (LD) [2 to 41. However, the lifetime of the LD and LED devices composed of this material was found to be not as long as predicted [5]. During light emitting operation, the devices were found to degrade rapidly or gradually.…”

Section: Introductionmentioning

confidence: 66%

“…During light emitting operation, the devices were found to degrade rapidly or gradually. This degradation is explained by carrier-recombination-enhanced dislocation at defects [5]. The origins of defects in LD and LED fall into three main categories: a) crystal-growth-induced defects including intentionally or unintentionally doped impurity; b) process-induced defects generated during the material processing associated with the device fabrication; and c) degradation-induced defects produced during the device operation.…”

Section: Introductionmentioning

confidence: 99%

Oxygen in In_xGa_1−xAs_yP_1–y Grown on GaAs

Zhu

Hiramatsu

Sawaki

et al. 1992

Physica Status Solidi (b)

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The measurement of DLTS on the alloy In,Ga,-,As,P,-, (0 5 y 5 0.3; 0.5 2 x 2 0.35) shows a new signal, labeled as E,, with an activation energy of E, -0.61 eV and the SIMS signals show a large number of oxygen. To clarify is further, the energy of the deep level E , is quantitatively calculated by using Vogl's tight-binding theory and Hjalmarson's deep level theory. As a result, the deep A,-symmetric level associated with an oxygen on the anion site of In,Gal-,As,P,-, locates deeply in the band gap. Thus, the level E, is considered to be induced by the oxygen impurity.DLTS-Messungen an der InxGal-xAsyP1-y (0 5 y 6 0,3; 0,5 2 x 2 0,35) zeigen ein neues Signal, bezeichnet mit E,, mit einer Aktivierungsenergie von E, -0,61 eV. Die SIMS-Signale zeigen eine groDe Anzahl von Sauerstoff. Um dies weiter aufzuklaren, wird die Energie des tiefen Niveaus E, quantitativ mit der Tight-Binding-Theorie von Vogl und der Theorie tiefer Niveaus von Hjalmarson berechnet. Als Ergebnis ist das tiefe Niveau mit A,-Symmetrie mit einem Sauerstoff auf Anionenplatz von In,Ga, -xA~yP1 -y tief in der Bandliicke lokalisiert. Somit wird angenommen, dal3 das E,-Niveau durch die Sauerstoffstorstelle induziert wird.

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“…The main objective of this section is to establish the fundamental relation between the degradation law extrapolated from optical power drift versus ageing time, assuming defect propagation in the active zone, and lifetime distribution for this technology working under operating conditions. According to the manufacturer's specifications, the failure criterion used for lifetime estimation is a decrease of 20% or 4.7 mW (see Table I) [50][51][52] . This corresponds to the lower value of optical power specified by the manufacturer: bias current I = 100 mA, voltage V = 1.47 V (at 300 K).…”

Section: Reliability Predictionsmentioning

confidence: 99%

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Degradation of III–V Opto‐Electronic Devices

Cited by 117 publications

References 45 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Oxygen in In_xGa_1−xAs_yP_1–y Grown on GaAs

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

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Degradation of III–V Opto‐Electronic Devices

Cited by 117 publications

References 45 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Oxygen in InxGa1−xAsyP1–y Grown on GaAs

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

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Oxygen in In_xGa_1−xAs_yP_1–y Grown on GaAs