1988
DOI: 10.1149/1.2095535
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Degradation of III–V Opto‐Electronic Devices

Abstract: The current status and understanding of various degradation phenomena in III–V opto‐electronic devices, especially, normalGaAs‐ and normalInP‐normalbased double‐heterostructure lasers and light emitting diodes, are reviewed. Three major degradation modes are focused as follows: rapid degradation due to recombination enhanced dislocation climb and glide, gradual degradation during operation over a long term, and accidental catastrophic degradation due to current surge. In each degradation mode, degraded reg… Show more

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Cited by 117 publications
(20 citation statements)
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“…In general, most of previous QW lasers on Si suffered from poor reliability and short lifetimes, impeding their practical application. The rapid degradation was attributed to the formation of dark line defects [89][90][91][92][93][94][95]. Fig.…”
Section: Lau Progress In Crystal Growth and Characterization Of Matmentioning
confidence: 99%
“…In general, most of previous QW lasers on Si suffered from poor reliability and short lifetimes, impeding their practical application. The rapid degradation was attributed to the formation of dark line defects [89][90][91][92][93][94][95]. Fig.…”
Section: Lau Progress In Crystal Growth and Characterization Of Matmentioning
confidence: 99%
“…This material has found its important application in making light emitting diodes (LED) and laser diodes (LD) [2 to 41. However, the lifetime of the LD and LED devices composed of this material was found to be not as long as predicted [5]. During light emitting operation, the devices were found to degrade rapidly or gradually.…”
Section: Introductionmentioning
confidence: 66%
“…During light emitting operation, the devices were found to degrade rapidly or gradually. This degradation is explained by carrier-recombination-enhanced dislocation at defects [5]. The origins of defects in LD and LED fall into three main categories: a) crystal-growth-induced defects including intentionally or unintentionally doped impurity; b) process-induced defects generated during the material processing associated with the device fabrication; and c) degradation-induced defects produced during the device operation.…”
Section: Introductionmentioning
confidence: 99%
“…The main objective of this section is to establish the fundamental relation between the degradation law extrapolated from optical power drift versus ageing time, assuming defect propagation in the active zone, and lifetime distribution for this technology working under operating conditions. According to the manufacturer's specifications, the failure criterion used for lifetime estimation is a decrease of 20% or 4.7 mW (see Table I) [50][51][52] . This corresponds to the lower value of optical power specified by the manufacturer: bias current I = 100 mA, voltage V = 1.47 V (at 300 K).…”
Section: Reliability Predictionsmentioning
confidence: 99%