EPD investigation in LEC‐grown silicon‐doped gallium arsenide

Abstract

The EPD distribution is investigated in silicon-doped LEC-grown gallium arsenide crystals, 30 f 40 mni in mainbotly diameter and weighing within 300 t 500 grams. The silicondoping-dependent hardening effect, previously observed in S-doped and Bridgman grown silicon-doped gallium arsenide is here confirmed. The EPD decreasing with silicon-doping increase is observed to be less pronounced than in the case of S-doped and Bridgmarr grown silicon-doped samples and possible reasons for this different behaviour are diecussed. I n any case, a large microprecipitate density together with the EPD reduction appears as a clustering of shallow-pits around dislocation pits.