Dislocation nucleation in 4H silicon carbide epitaxy

Ha, S.; Chung, Hun Jae; Nuhfer, Noel T.; Skowroński, Marek

doi:10.1016/j.jcrysgro.2003.09.054

Cited by 44 publications

(22 citation statements)

References 22 publications

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“…The formation of BPD loops around micropipes, dislocation half-loops creating an interfacial BPD near the epilayer/substrate interface and half-loop arrays having short BPD segments has been reported in 4H-SiC epitaxial growth [42][43][44][45]. Figure 19a and b show grazing incidence X-ray topography images taken before and after epitaxial growth, exhibiting a different formation mode of BPDs.…”

Section: Bpdsmentioning

confidence: 76%

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Tsuchida¹,

Ito²,

Kamata³

et al. 2009

Physica Status Solidi (b)

141

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This paper surveys extended defects in 4H‐SiC epilayers and reports recent results concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron microscopy, Nomarski optical microscopy and defect selective etching analysis are applied to investigate the nucleation and propagation of carrot defects, basal plane Frank‐type defects, polytype inclusions and basal plane dislocations (BPDs) in 4H‐SiC epitaxial growth. In the development of the 4H‐SiC fast epitaxial growth technique, a very high growth rate of up to 250 μm/h is obtained in a newly developed vertical hot‐wall‐type reactor under low system pressure using a H2 + SiH4 + C3H8 system. Good thickness and impurity doping uniformity are also obtained simultaneously over a large area, with the retention of a high growth rate. A 4H‐SiC epilayer virtually free from BPDs is obtained on a 4° off Si‐face substrate. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Bpdsmentioning

confidence: 76%

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Tsuchida¹,

Ito²,

Kamata³

et al. 2009

Physica Status Solidi (b)

141

View full text Add to dashboard Cite

show abstract

“…Extended defects in 4H-SiC epilayers are introduced by defect propagation from the substrate as well as defect generation during epitaxial growth. Several types of conversion and generation of dislocations and stacking faults during 4H-SiC epitaxial growth have been reported [1][2][3][4][5][6][7][8][9][10][11]. Each extended defects can have a different influence on the device performance.…”

Section: Introductionmentioning

confidence: 99%

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Tsuchida

Kamata

Nagano

2008

Journal of Crystal Growth

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“…Such a kink pushing mechanism was also observed for the advancing partial dislocation dipole consisting of the Si-core and C-core partials from SFs originating from separate half-loops along a half-loop array 21 (not partial dipoles dragged behind after interacting with TSDs as discussed in Fig. 4).…”

Section: Resultsmentioning

confidence: 56%

Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

Chen

Zhang

Dudley

et al. 2007

Journal of Elec Materi

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Electron-hole recombination-activated partial dislocations in 4H silicon carbide homoepitaxial layers and their behavior have been studied using synchrotron X-ray topography and electroluminescence. Stacking faults whose expansion was activated by electron-hole recombination enhanced dislocation glide were observed to be bounded by partial dislocations, which appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. Observations also indicate that, when an advancing partial dislocation interacts with a threading screw dislocation, a partial dislocation dipole is dragged behind in its wake. This partial dislocation dipole is able to advance regardless of the immobility of the C-core segment. A kink pushing mechanism is introduced to interpret the advancement of this partial dislocation dipole.

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Dislocation nucleation in 4H silicon carbide epitaxy

Cited by 44 publications

References 22 publications

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

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