Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers

Abstract

Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers. In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer, many threading dislocations interact and annihilate within about 100 nm below the multiple quantum well layer. For multiple-quantum-well layers grown with the AlGaN interlayer, misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density. Besides misfit dislocations, the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface.

Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

“…Therefore, stress influences the propagation of dislocations as different interlayers were inserted. Details of dislocation behavior were discussed in another work [24]. From the results, it is manifested that the AlGaN interlayer effectively blocks the threading dislocation.…”

Accurate measurement and influence on device reliability of defect density of a light-emitting diode

“…[1] Recently there have been lots of reports to clarify the influence of defect density on the luminescence properties of LEDs. [2][3][4] However, the measurement of LED defect density is still under discussion. With the LED chip surface covered with complex structures of the electrode and the active layer being located inside the chip, existing defect detection technology including XRD (X-ray diffraction) and TEM (transmission electron microscope) cannot detect LED defect density within the active layer effectively.…”