Directional solidification of InxGa1−xAs

III–V Ternary bulk substrate growth technology: a review

“…For bulk single crystal growth of III-V ternary alloy, the lattice constant of the first-to-freeze section of the crystal should have solute content less than or equal to 5 mol% of the value in the seed [2][3][4][5][6]. For example, during the growth of single crystal Ga 1Àx In x Sb on GaSb seed, the first to freeze Ga 1Àx In x Sb should have xo0.05.…”

“…Unlike binary compounds, spontaneously nucleated ternary alloys (such as from tip of a crucible in Bridgman method) are always polycrystalline in nature. Single crystalline seeds with lattice parameter within 1% are necessary for growing single crystalline ternary alloys [2][3][4][5][6].…”

“…To obtain homogeneous composition along the growth direction, a variety of sophisticated meltreplenishing schemes for the depleted species have been attempted by different researchers with limited success [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The mass transport from the feed to the solid-liquid interface is not obvious or easy to control due to a complex interplay between fluid flow patterns and heat transfer.…”

In situ observation of composition profiles in the solution by X-ray penetration method

“…The alloy crystals offer the possibility to reduce the problem of lattice mismatch at the interface between a substrate and an epilayer. Ternary alloy crystals such as InGaAs [1][2][3][4][5][6][7], InGaSb [8][9][10][11][12], InSbBi [13,14], InAsSb [15,16] have been grown until now. However, it is very difficult to grow large single crystals of high quality, because there are three major problems, which must be overcome.…”

“…They were divided into two parts by a sheet to establish initial condition. Since the density of NH 4 Br is 2.429 g/cm 3 and it is larger than that of H 2 O, NH 4 Br solution was set under H 2 O. To make clear the position of the sample, lead (Pb) plates were placed at the top and the bottom area of the sample.…”