Crystal‐Growth Technology for Ternary III‐V Semiconductor Production by Vertical Bridgman and Vertical Gradient Freezing Methods with Accelerated Crucible Rotation Technique

Low temperature growth of Ga1−xInxP bulk crystals from InSb-rich melt

“…Unfortunately, growth of ternary compounds by conventional melt growth techniques is quite challenging [1][2][3]. Hence, commercial ternary substrates are not readily available.…”

“…Hence, commercial ternary substrates are not readily available. For ternary crystals with high crystalline quality, precise control of the melt composition and efficient melt mixing during growth is necessary [3]. This poses significant difficulties during the growth of high melting points P-and As-based compounds due to their high vapor pressures of the group V elements.…”