Directed block copolymer self-assembly for nanoelectronics fabrication

Herr, Daniel J. C.

doi:10.1557/jmr.2010.74

Cited by 190 publications

(186 citation statements)

References 183 publications

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“…Recent developments in BCP-assisted patterning of nanostructures suggests that these templates have the potential to form well aligned and precisely positioned 2D patterns at sub 10 20 nanometre scales. [191][192][193] BCP-based fabrication opens up immense prospects for the production of laterally-ordered ferroelectric nanopatterns.…”

Section: Two-dimensional Ferroelectric Nanostructuresmentioning

confidence: 99%

“…The quantification of a piezoresponse from an individual nanostructure is possible through the Put together, the main uses of PFM are (i) to measure a piezoresponse, (ii) ferroelectric domain imaging and patterning, (iii) to study domain dynamics and phase transformations and (iv) local polarisation switching and mapping, at the nanoscale. 33,34,191,192,211,212 The major applications of PFM are illustrated in Figure 10 20 (adopted from Lee et al 86 ). PFM has also been used extensively to study and understand the mechanisms of nanoscale ferroelectric domain growth.…”

Section: Characterisation Of Nanoscale Ferroelectric Materialsmentioning

confidence: 99%

“…For instance, the potential use of nanoimprint lithography 91,139,140,159 and self-assembled BCPs 191,193,275 to produce highly ordered patterns of nanostructures could be effectively exploited to achieve the above mentioned challenges. Efforts in enhancing the spatial resolution of current characterisation tools will also be required to tackle the future 5 developments in nanoscale ferroelectric research.…”

Section: Future Outlook Of Nanoscale Ferroelectric Materialsmentioning

confidence: 99%

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Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

2013

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Nanostructured materials are central to the evolution of future electronics and information technologies. Ferroelectrics have already been established as a dominant branch in the electronics sector because of their diverse application range such as ferroelectric memories, ferroelectric tunnel junctions, etc. The on-going dimensional downscaling of materials to allow packing of increased numbers of components onto integrated circuits provides the momentum for the evolution of nanostructured ferroelectric materials and devices. Nanoscaling of ferroelectric materials can result in a modification of their functionality, such as phase transition temperature or Curie temperature (TC), domain dynamics, dielectric constant, coercive field, spontaneous polarisation and piezoelectric response. Furthermore, nanoscaling can be used to form high density arrays of monodomain ferroelectric nanostructures, which is desirable for the miniaturisation of memory devices. This review article highlights some research breakthroughs in the fabrication, characterisation and applications of nanoscale ferroelectric materials over the last decade, with priority given to novel synthetic strategies

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Section: Two-dimensional Ferroelectric Nanostructuresmentioning

confidence: 99%

Section: Characterisation Of Nanoscale Ferroelectric Materialsmentioning

confidence: 99%

Section: Future Outlook Of Nanoscale Ferroelectric Materialsmentioning

confidence: 99%

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Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

2013

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“…So far, the most widely used lithographic techniques capable of achieving critical dimensions below 50 nm in graphene are electron beam lithography (EBL), 3,18 block copolymer lithography 4,9,11 and colloidal lithography. 19 Despite the efforts to direct the formation of patterns by pre-deposited mechanical or chemical guides 11 or external fields, 20 block copolymer lithography and colloidal lithography are strongly limited in terms of the range of possible patterns that can be generated compared to beam-induced patterning.…”

Section: Introductionmentioning

confidence: 99%

Defect/oxygen assisted direct write technique for nanopatterning graphene

et al. 2015

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High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.

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“…In the last several years, DSA has rapidly moved from university-level research to active development in many companies [1]. According to the International Technology Roadmap for Semiconductors 2012 Update [2], one of the major challenges for DSA is still defect-free processing.…”

Section: Introductionmentioning

confidence: 99%

Large-Scale Simulations of Directed Self-Assembly with Simplified Model

Yoshimoto

Taniguchi

2013

J. Photopol. Sci. Technol.

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Directed self-assembly (DSA) is considered as a candidate for future patterning technology for semiconductor manufacturing. The DSA utilizes the phase separation of block copolymer and provides further resolution enhancement by the use of chemically and physically pre-patterned surface. In order for DSA to be a viable lithography solution, it is crucial to realize defect-free manufacturing process. In this study, we utilize the so-called Ohta-Kawasaki (OK) model to simulate the morphological defects of block copolymer formed on the chemically and physically pre-patterned surface. The OK model has advantages of the relatively low computational expense, scalability for large-scale simulations, and compatibility to the other simulation models such as self-consistent field theory (SCFT) through common physical properties of the materials. As test cases, we investigated the lamella defects of symmetric diblock copolymer formed on the chemically and physically pre-patterned surface. For the chemically pre-patterned surface, the two-dimensional (2D) dynamic simulations were performed including the thermal fluctuations, and the time evolution of the lamella defects was characterized as a function of the surface interactive parameter. In the three-dimensional (3D) dynamic simulations of the physically pre-patterned surface, effects of the trench width on the formation of the lamella defects was examined. Our preliminary results demonstrate that various types of the DSA lamella defects can be reasonably predicted by the OK model. It is expected that by calibrating the surface interactive parameters with experimental data, the OK model could be applied to various large-scale DSA simulations, e.g., hotspot analysis over a large area, and design/process optimizations with numerous parameters.

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Directed block copolymer self-assembly for nanoelectronics fabrication

Abstract: Abstract

Cited by 190 publications

References 183 publications

Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

Ferroelectric nanoparticles, wires and tubes: synthesis, characterisation and applications

Defect/oxygen assisted direct write technique for nanopatterning graphene

Large-Scale Simulations of Directed Self-Assembly with Simplified Model

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