Direct writing of active loads by focused ion beams

Wiemann, C.; Versen, Martin; Wieck, A. D.

doi:10.1116/1.590211

Cited by 21 publications

(9 citation statements)

References 14 publications

(12 reference statements)

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“…The depletion region width of a 2D p-n junction, which is the "piston travel" in the above pump, depends linearly on the applied voltage [13][14][15] and is given by ( )…”

Section: Resultsmentioning

confidence: 99%

Electrostatic electron piston pump with in‐plane gate transistors

Draghici

Salloch

Melnikov

et al. 2007

Physica Status Solidi (b)

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We have demonstrated an electron pump with in-plane gate (IPG) transistors fabricated by focused ion beam (FIB) implantation on GaAs -Al x Ga 1-x As modulation-doped heterostructure with a two-dimensional electron gas (2DEG). The maskless fabrication process does not require any alignment between the circuit elements including the sources, the drains and the gates of the IPG transistors. Although, the device is operating at low frequencies (tens of kHz), it is capable to produce a current more than one order of magnitude higher than other electron pumps based on Coulomb blockade and single electron tunneling effects.

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“…The depletion region width of a 2D p-n junction, which is the "piston travel" in the above pump, depends linearly on the applied voltage [13][14][15] and is given by ( )…”

Section: Resultsmentioning

confidence: 99%

Electrostatic electron piston pump with in‐plane gate transistors

Draghici

Salloch

Melnikov

et al. 2007

Physica Status Solidi (b)

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“…The central circular trap gate is surrounded by a guard gate which is separated from a trap gate by a 100 nm narrow (slit) ungated region for insulation. Suitably biased by voltage V G below the flat band voltage of V FB it defines the outside surface potential to enable the formation of IXs and creates a depletion zone 7,46 around the trap gate perimeter, thus providing the confinement for IX. Fig.…”

Section: The Electrostatic Trapping Principle Of the Quantum Trapsmentioning

confidence: 99%

Single exciton emission from gate-defined quantum dots

Schinner,

Repp,

Schubert

et al. 2012

Preprint

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With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.

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“…4(a) [14]. Here, we apply the analogous gate effect on the depletion length d de in a coplanar capacitor with that in a sandwich capacitor [15]. In a 2DEG with density n 2D and side-gate depletion voltage U de , d de~Ude ͞n 2D .…”

Section: Selective Control Of Electrons In Quantum Wires Formed By Himentioning

confidence: 99%

Selective Control of Electrons in Quantum Wires Formed by Highly Uniform Multiatomic Step Arrays on GaAs(331) Substrates

1999

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Coherently aligned, multiatomic step arrays on GaAs(331) substrates generate a periodic array of conductive quantum wires in a two-dimensional (2D) electron gas. A small number of wires is selected by superimposing a constriction with independent side-gate control. By tuning the gate-voltage window, wires can be selected one by one. The resulting oscillatory current transmission provides a new functionality by switching between spatially separated electron channels. The wires are coupled by a small number of 2D electrons resulting in orders of magnitude reduced conductance perpendicular to the step edges. 73.61.Ey Semiconductor quantum wires (QWRs) with widths #100 nm have been widely investigated because of their unique electrical and optical properties, which have a profound impact on basic physics as well as device applications [1,2]. Novel in situ growth techniques allow for further developments in the fabrication of dense arrays of QWRs and dots with lateral periodicities of several 10 nm [3,4]. One major advantage in implementing these arrays in future device concepts is the increased current for multiple wires acting in parallel and the related averaging over conductance fluctuations due to defects to provide a well defined output signal [5]. In addition, a higher functionality can be achieved by selective electrical access to a distinct single QWR within the array, which allows for adding, subtracting, and coupling of one-dimensional (1D) conducting channels.Previous approaches for the formation of dense arrays of QWRs rely on the accumulation of monolayer high step and terrace arrays on vicinal substrates [4,6,7]. However, the high density of kinks and the meandering of the step edges, which cannot be avoided for monolayer high steps, are to a large extent transferred to the multiatomic step arrays (MSA) resulting in pronounced fluctuations in the height and a large number of step crossings limiting the effective length of the wires. The conductance along the wire array between two macroscopic contacts thus includes frequent transitions of carriers from wire to wire, which reduces the conductance and increases conductance fluctuations.We have recently fabricated highly uniform MSA, which are formed along ͓110͔ on high-index GaAs(331) surfaces by atomic-hydrogen-assisted molecular beam epitaxy [8]. The MSA exhibit a lateral periodicity of 250 nm and are straight over distances .10 mm with minimized height fluctuations. This high structural perfection is related to the microscopic surface structure, which is composed of (110) terraces and (111) steps of similar size, resulting in a higher stability against kink formation during step bunching [9]. The step height can be tuned in a wide range up to 13 nm by the substrate temperature while maintaining the lateral periodicity.We utilize the MSA as a template for the formation of dense arrays of conductive QWRs by transferring the periodic surface corrugation to the interface of Si modulation-doped GaAs͞Al 0.3 Ga 0.7 As heterostructures. The two-dimensional...

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Direct writing of active loads by focused ion beams

Cited by 21 publications

References 14 publications

Electrostatic electron piston pump with in‐plane gate transistors

Electrostatic electron piston pump with in‐plane gate transistors

Single exciton emission from gate-defined quantum dots

Selective Control of Electrons in Quantum Wires Formed by Highly Uniform Multiatomic Step Arrays on GaAs(331) Substrates

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