Electrostatic electron piston pump with in‐plane gate transistors

Abstract

We have demonstrated an electron pump with in-plane gate (IPG) transistors fabricated by focused ion beam (FIB) implantation on GaAs -Al x Ga 1-x As modulation-doped heterostructure with a two-dimensional electron gas (2DEG). The maskless fabrication process does not require any alignment between the circuit elements including the sources, the drains and the gates of the IPG transistors. Although, the device is operating at low frequencies (tens of kHz), it is capable to produce a current more than one order of magnitude higher than other electron pumps based on Coulomb blockade and single electron tunneling effects.

In‐plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique

“…These insulating lines define a 1D channel, whose dimension can be controlled with the gate bias. Recently, an electron pump 13 and logic circuits with IPGs based on three‐terminal ballistic junctions were reported 14. These devices proved that the planar gates fabricated by maskless, resist‐free FIB are very promising for the fabrication of high‐quality nanoelectronic devices.…”