2009
DOI: 10.1016/j.apsusc.2008.08.084
|View full text |Cite
|
Sign up to set email alerts
|

Direct observation of phase transitions by time-resolved pyro/reflectometry of KrF laser-irradiated metal oxides and metals

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
8
0

Year Published

2009
2009
2017
2017

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 12 publications
(8 citation statements)
references
References 16 publications
0
8
0
Order By: Relevance
“…concluded that liquid phase can last up to 300 ms for Ti under the laser fluence of 1 J/cm 2 [30]. Hence for Ti alloy ablated at 5 kHz, the laser pulses will irradiate on a melt surface.…”
Section: Discussionmentioning
confidence: 98%
See 1 more Smart Citation
“…concluded that liquid phase can last up to 300 ms for Ti under the laser fluence of 1 J/cm 2 [30]. Hence for Ti alloy ablated at 5 kHz, the laser pulses will irradiate on a melt surface.…”
Section: Discussionmentioning
confidence: 98%
“…3). Since many experiments have found that plasma formation occurs on a timescale between picosecond and tens of microseconds [28][29][30], one can expect that there should be no interaction between a current laser pulse and its following plasma when the laser repetition rate <5 kHz. It means any plasma will be certainly gone when the next laser pulse arrives.…”
Section: Discussionmentioning
confidence: 98%
“…These situations explain the removal of copper from the surface that increases as increasing the number of laser shots (from 1 to 150). The shift of the TRR signal (≈4 mV and 9 mV [15]. In opposite, in the case of sample 4, the melting kinetics is the most dominant mechanisms and the typical TRR signals evolve to their initial values after a negative drop.…”
Section: Effect Of Number Of Laser Shot and Substratementioning
confidence: 89%
“…Laser heating and melting of semiconductors (especially silicon) have been done by nanosecond pulsed laser [4][5][6]. Melting duration, threshold for metallic thin films upon pulsed laser annealing were determined by time-resolved reflectivity method [7,[13][14][15]. On time scale of microseconds, the longest melting duration in the interaction of the excimer laser with gold films about a few microseconds [2] and amorphous Si thin films about 1.7 μs [8] was determined by the reflectance measurements of Ar + ion and He-Ne probe lasers respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, the melt layer persists for a longer time, approximately 300 µs [36]. If we consider the repetition rate, at 1 kHz the pulses are 999 µs apart.…”
Section: Discussionmentioning
confidence: 99%