Direct observation of negative differential resistance in WS2 homojunction

Hsu, Bo; Farid, Sidra; Almazan, Justino; Stroscio, Michael A.; Dutta, Mitra

doi:10.1063/5.0035413

Cited by 7 publications

(6 citation statements)

References 33 publications

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“…[120] With the emergence of novel materials, RT and resulting multipeak I-V curves have been reported in various structures based on graphene, TMDCs, organic materials, and perovskites. [121][122][123][124][125][126][127][128][129] Most of these works underline the application potential of the demonstrated RT devices in the MVL field, however, since they mainly represent early results, MVL applications are yet to be demonstrated. Several representative works will be briefly introduced in this section.…”

Section: Resonant-tunneling (Rt) Devicesmentioning

confidence: 99%

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

et al. 2022

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Figure 8. Single-electron transistors (SETs). a) Schematic structure and b) transfer I-V characteristic of a typical SET. c) Schematic diagram and scanning electron microscopy image of the two-gate SET. d) Transfer I-V characteristic of the two-gate SET at V in2 = 0 V and 0.2 V. c,d) Reproduced with permission. [18] Copyright 2000, IEEE. e) Circuit diagram of the universal literal gate and its periodic V in −V out characteristic. Reproduced with permission. [98] Copyright 2003, IEEE. f) Schematic of the two-input hybrid MOSFET-SET device. g) The output voltage as a function of two input gate voltages. f,g) Adapted with permission. [103] Copyright 2009, IEEE. h,i) Schematic diagram of the Si EQD SET (h) and its typical two-peak transfer characteristic (i). j) Contour plot demonstrating I D as a function of V DS and V G enabling ternary and quaternary operation regimes. h-j) Reproduced with permission. [105]

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Section: Resonant-tunneling (Rt) Devicesmentioning

confidence: 99%

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

et al. 2022

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“…This formed the origin of the Esaki diode. Various methods to realize NDR characteristics such as tunneling devices, − Gunn diodes, , single electron transistors, , and molecular devices , have been introduced to date. In particular, NDR studies based on band-to-band tunneling (BTBT) in van der Waals (vdW) heterojunction structures fabricated on two-dimensional (2D) transition metal dichalcogenides (TMDCs) have achieved significant progress due to the atomic-scale thickness and excellent interface quality of the TMDCs. − ,− In general, the NDR performance is mainly determined by the peak-to-valley current ratio (PVCR) of the NDR curve and the current and voltage levels of its peaks and valleys.…”

Section: Introductionmentioning

confidence: 99%

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (J peak) as well as controllable peak and valley voltages (V peak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, V peak/valley is easily modulated by controlling the length of VO2. In addition, a maximum J peak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

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“…It exhibits an indirect band gap of ∼1.4 eV in the bulk form and transforms to a direct-band-gap semiconductor (band gap: ∼2.1 eV) in its monolayer limit. , As a result, the effective barrier height in graphene–WS 2 –graphene (GWG) heterostructures is suitable for effective carrier tunneling, and the change in the Fermi level of graphene is comparable to the barrier height, leading to high-performance GWG tunneling transistors with an ON/OFF ratio much higher than FETTs based on graphene–hBN–graphene or graphene–MoTe 2 –graphene heterostructures . A few studies have reported the tunneling devices based on GWG heterostructures, demonstrating high ON/OFF ratio, light emission, and negative differential resistance. ,,, However, a systematic exploration of the electronic properties of GWG tunneling transistors, including the band alignment, the bias-controlled barrier shape, height, and the transition from direct tunneling to Fowler–Nordheim tunneling, is still lacking.…”

Section: Introductionmentioning

confidence: 99%

“…20 A few studies have reported the tunneling devices based on GWG heterostructures, demonstrating high ON/ OFF ratio, light emission, and negative differential resistance. 20,33,37,38 However, a systematic exploration of the electronic properties of GWG tunneling transistors, including the band alignment, the bias-controlled barrier shape, height, and the transition from direct tunneling to Fowler−Nordheim tunneling, is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Highly Tunable Carrier Tunneling in Vertical Graphene–WS₂–Graphene van der Waals Heterostructures

et al. 2022

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Owing to the fascinating properties, the emergence of two-dimensional (2D) materials brings various important applications of electronic and optoelectronic devices from field-effect transistors (FETs) to photodetectors. As a zero-band-gap material, graphene has excellent electric conductivity and ultrahigh carrier mobility, while the ON/OFF ratio of the graphene FET is severely low. Semiconducting 2D transition metal chalcogenides (TMDCs) exhibit an appropriate band gap, realizing FETs with high ON/OFF ratio and compensating for the disadvantages of graphene transistors. However, a Schottky barrier often forms at the interface between the TMDC and metallic contact, which limits the on-state current of the devices. Here, we lift the two limits of the 2D-FET by demonstrating highly tunable field-effect tunneling transistors based on vertical graphene–WS2–graphene van der Waals heterostructures. Our devices show a low off-state current below 1 pA and a high ON/OFF ratio exceeding 106 at room temperature. Moreover, the carrier transport polarity of the device can be effectively tuned from n-type under small bias voltage to bipolar under large bias by controlling the crossover from a direct tunneling region to the Fowler–Nordheim tunneling region. Further, we find that the effective barrier height can be controlled by an external gate voltage. The temperature dependence of carrier transport demonstrates that both tunneling and thermionic emission contribute to the operation current at elevated temperature, which significantly enhances the on-state current of the tunneling transistors.

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Direct observation of negative differential resistance in WS2 homojunction

Cited by 7 publications

References 33 publications

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Highly Tunable Carrier Tunneling in Vertical Graphene–WS₂–Graphene van der Waals Heterostructures

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Direct observation of negative differential resistance in WS2 homojunction

Cited by 7 publications

References 33 publications

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Highly Tunable Carrier Tunneling in Vertical Graphene–WS2–Graphene van der Waals Heterostructures

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Highly Tunable Carrier Tunneling in Vertical Graphene–WS₂–Graphene van der Waals Heterostructures