2023
DOI: 10.1002/sstr.202300011
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Direct Observation of Liquid–Solid Two‐Phase Seed Particle‐Assisted Kinking in GaP Nanowire Growth

Abstract: In the last decades, the metal‐assisted growth approach of semiconductor nanowires (NWs) has shown its potential in controlling crystal properties, such as crystal structure, composition, and morphology. Recently, literature reports have shown successful semiconductor NW growth with multiphase seed particles under growth conditions. Exploring alternative metal seeds and the mechanisms for growing semiconductor NWs is an exciting research field aiming to improve the control over the crystal growth process. Here… Show more

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Cited by 4 publications
(4 citation statements)
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“…The introduction of environmental transmission electron microscopes (ETEMs) has allowed the exploration of some of the previously hidden aspects of nanowire growth dynamics in real time. Importantly, nanowires have in some circumstances been shown to exhibit unconventional growth modes that differ from the traditional view. , In situ growth has also proven to be an invaluable technique in developing new methods and strategies to circumvent known problems in conventional ex situ nanowire growth systems, which has most notably been demonstrated in Si nanowire growth. , The strength lies in that the surrounding growth conditions can be changed in real time based on the observations made, and the effects on the growth are immediate, which means that conclusions about the growth dynamics can quickly be drawn. By monitoring the growth and how it changes with the growth conditions, it is also easier to make rational decisions about how to adjust the growth conditions to achieve a specific result.…”
mentioning
confidence: 99%
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“…The introduction of environmental transmission electron microscopes (ETEMs) has allowed the exploration of some of the previously hidden aspects of nanowire growth dynamics in real time. Importantly, nanowires have in some circumstances been shown to exhibit unconventional growth modes that differ from the traditional view. , In situ growth has also proven to be an invaluable technique in developing new methods and strategies to circumvent known problems in conventional ex situ nanowire growth systems, which has most notably been demonstrated in Si nanowire growth. , The strength lies in that the surrounding growth conditions can be changed in real time based on the observations made, and the effects on the growth are immediate, which means that conclusions about the growth dynamics can quickly be drawn. By monitoring the growth and how it changes with the growth conditions, it is also easier to make rational decisions about how to adjust the growth conditions to achieve a specific result.…”
mentioning
confidence: 99%
“… 15 21 Importantly, nanowires have in some circumstances been shown to exhibit unconventional growth modes that differ from the traditional view. 22 , 23 In situ growth has also proven to be an invaluable technique in developing new methods and strategies to circumvent known problems in conventional ex situ nanowire growth systems, which has most notably been demonstrated in Si nanowire growth. 16 , 17 The strength lies in that the surrounding growth conditions can be changed in real time based on the observations made, and the effects on the growth are immediate, which means that conclusions about the growth dynamics can quickly be drawn.…”
mentioning
confidence: 99%
“…In recent years, nanowire growth in specialized environmental transmission electron microscopes has enabled investigation of the growth processes in real time. In III-V nanowires, these studies help to establish connections between experimental parameters, real-time Au droplet composition, and the resulting nanowire morphology, growth rate, and properties such as crystal phase and composition. Moreover, in III-As nanowires, a small number of in situ studies have focused on investigating the layer-by-layer growth and the two processes comprising it, namely the incubation and step-flow processes. These describe the time it takes for a new layer to nucleate and, subsequently, the time it takes for the layer to cover the liquid–solid interface, respectively. This has revealed, for example, how the group III and group V precursors affect the incubation and step-flow processes independently, offering a deeper insight into the fundamentals of nanowire growth .…”
Section: Introductionmentioning
confidence: 99%
“…In our previous works on the mechanisms of growth of SiNWs [ 18 , 19 ], we have illustrated how the use of a mixed catalyst—where one of the components is liquid and the other one is solid—increases even more these possibilities, in a mode we have called liquid-assisted-VSS (LAVSS). Since then, the tuning of the shape or the orientation of the nanowires by LAVSS has also been used in the growth of compound semiconductor NWs [ 20 ]. The system we explored in the refs.…”
Section: Introductionmentioning
confidence: 99%