Diameter Control of GaSb Nanowires Revealed by <i>In Situ</i> Environmental Transmission Electron Microscopy

Marnauza, Mikelis; Sjökvist, Robin; Lehmann, Sebastian; Dick, Kimberly A.

doi:10.1021/acs.jpclett.3c01928

Cited by 2 publications

(13 citation statements)

References 44 publications

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“…We have investigated this in a previous study where we focused on connecting the growth conditions, droplet composition during growth, and GaSb nanowire morphology. 27 This study allowed us to determine that there are two distinct regimes in our investigated growth window where droplet volume is increased with a reduced V/III ratio and where it remains stable, respectively; in the text, these will be referred to as the dynamic and stable regimes. The dynamic and stable regimes are marked in Figure 2c,d and several following figures by the yellow and cyan backgrounds, respectively.…”

Section: Nanoparticle Morphology and Compositionmentioning

confidence: 99%

“…In Figure 2d, the droplet composition recalculated as the number of atoms, normalized to the number of Au atoms, is plotted in a log scale based on the original XEDS measurements. 27 The recalculation method requires an estimation of the droplet volume, described in Supporting Information SI-3. For both series, we observed that the composition remains relatively unchanged when the droplet volume is stable, while an increase in the droplet volume was accompanied by a steady increase in both the number of Ga and Sb atoms with reduced V/III ratio.…”

Section: Nanoparticle Morphology and Compositionmentioning

confidence: 99%

“…In Au-seeded GaSb nanowires, the group V element concentration and absolute number of atoms in the Au−Ga alloy are significantly larger than those in the growth of GaAs, which could therefore lead to the instantaneous step-flow observed. 19,27 To investigate this, the ratio between Sb atoms in the liquid phase and a full solid layer as a function of the V/III ratio is shown in Figure 3c. The number of Sb atoms in the solid phase is based on numerical calculation assuming stoichiometric solid composition of GaSb nanowires with a hexagonal cross-section.…”

Section: Layer Dynamicsmentioning

confidence: 99%

“…The simulation input is based on the experimentally determined concentrations in the nanoparticle, where the absolute number of Au atoms has been computed from the XEDS measurements. 27 Note that the amount of Au in the nanoparticle is assumed to be unchanging during growth and, as such, was set constant in the two series based on the initial concentration of Au measured (see the discussion in Supporting Information SI-5). Another input into the model was the radius of the nanowire, which is important since it determines the amount of material needed to form a layer.…”

Section: Simulating the Growth Processmentioning

confidence: 99%

“…34,35 This corresponds well to previous experimental studies of Au-seeded GaSb nanowire growth demonstrating that a high concentration of Ga (around or above 70 at.%) and an Sb concentration of a few at.% is needed to facilitate the growth process. 27 Both simulation and experimental investigations suggest that the growth is largely dependent on Sb. The step-flow behavior is determined by the absolute amount dissolved in the nanoparticle compared to the amount needed to cover the LS interface, which yields the instant step-flow regime.…”

Section: Crystal Growthmentioning

confidence: 99%

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In Situ Study of Growth Dynamics in Au-Seeded GaSb Nanowires

Sjökvist,

Marnauza,

Dick

2024

Crystal Growth & Design

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Understanding the growth dynamics of III-V nanowires is crucial to attaining the atomistic control of nanowire growth required for the fabrication of high-quality devices.In situ studies allow us to monitor the individual processes of the cyclic layer-by-layer growth, which permits us to gain more insight into the growth dynamics than using conventional growth studies. Here, we demonstrate how the incubation and step-flow process times that govern nucleation and layer propagation depend on the nanoparticle composition and growth conditions in steady-state growth of Au-seeded GaSb nanowires. We find that both processes are predominantly affected by the number of Sb atoms dissolved in the nanoparticle, which is further influenced by the exchange rate of Sb atoms across the liquid−vapor interface. Additionally, we find that the growth dynamics are further complicated due to the interrelated nature of Ga and Sb atoms in the liquid phase. Lastly, we show that the complex growth behavior observed experimentally can be explained by conducting Monte Carlo-based nanowire growth simulations that accurately reproduce the observed trends. The results presented in this study demonstrate that a comprehensive understanding of nanowire growth can be achieved with careful consideration of all phases and growth species.

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Section: Nanoparticle Morphology and Compositionmentioning

confidence: 99%

Section: Nanoparticle Morphology and Compositionmentioning

confidence: 99%

Section: Layer Dynamicsmentioning

confidence: 99%

Section: Simulating the Growth Processmentioning

confidence: 99%

Section: Crystal Growthmentioning

confidence: 99%

See 3 more Smart Citations

In Situ Study of Growth Dynamics in Au-Seeded GaSb Nanowires

Sjökvist,

Marnauza,

Dick

2024

Crystal Growth & Design

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Recent progress of group III–V materials-based nanostructures for photodetection

Cong,

Yin,

Zheng

et al. 2024

Nanotechnology

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Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection range from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired.In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.

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Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy

Cited by 2 publications

References 44 publications

In Situ Study of Growth Dynamics in Au-Seeded GaSb Nanowires

In Situ Study of Growth Dynamics in Au-Seeded GaSb Nanowires

Recent progress of group III–V materials-based nanostructures for photodetection

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