Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Tsuchiya, Toshiaki; Mori, Yutaka; Morimura, Yuta; Mogami, Tohru; Ohji, Yuzuru

doi:10.1109/essderc.2009.5331364

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Variability Of Threshold Voltages2

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2009

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“…Although some studies on the emission property have been reported so far (40,41) from MOSFETs containing only a few traps (42). Figure 16 shows (a) the CP current of MOSFETs containing four interface traps and (b) the number of interface traps for many individual small MOSFETs (42). These results have an impact on threshold voltage fluctuations in future nano-scaled CMOS devices.…”

Section: Variability Of Threshold Voltagesmentioning

confidence: 98%

“…Therefore, in order to understand RTS in future nano-scaled CMOS devices, identification of the gate insulator interface traps, i.e., the number and carrier capture/emission properties of traps, will be essential. Although some studies on the emission property have been reported so far (40,41) from MOSFETs containing only a few traps (42). Figure 16 shows (a) the CP current of MOSFETs containing four interface traps and (b) the number of interface traps for many individual small MOSFETs (42).…”

Section: Variability Of Threshold Voltagesmentioning

confidence: 99%

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