Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics

The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

“…In the linear regime, the FTCE can significantly impact mobility [31,63,64,66,79,83,91,92,[96][97][98]. In a conventional DC sweep of the I d -V g measurement, the threshold voltage shifts as the measurement progresses, thereby decreasing the drive current at each bias sweep point resulting in decreased mobility.…”

“…In a conventional DC sweep of the I d -V g measurement, the threshold voltage shifts as the measurement progresses, thereby decreasing the drive current at each bias sweep point resulting in decreased mobility. Several FTC correction techniques discussed in the literature can correct for this effect [31,63,79,83]. One technique that requires only two measurements and minimal data analysis was presented in [79].…”

Improved effective mobility extraction in MOSFETs

“…In the present case, the steep drop to the left of the peak in Fig. 8 is at least partially due to trapping processes that affect the CV measurement [19] and may be obviated by inversion charge pumping [20]. The fully corrected mobility values at 300 K and 4 K (solid lines from Figs.…”

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

“…6 Under such conditions, a quantity aÁN inv is forced to recombine in the substrate and contribute to N CP_SD . A correction for the quantity (1 À a).N inv , representing the sum of the charge density lost by diffusion to the source (N S ) and to the drain (N D ), is applied through the measurements of N CP_S [ Fig.…”