Direct imaging of the evolving Au/InSb(111) <i>B</i> interface

Mıshıma, Tetsuya D.; Nakamura, Jun; Tsukada, Kenji; Nishizawa, Masatoyo; Eguchi, Toyoaki; Ohteki, Toshiaki

doi:10.1116/1.590169

Cited by 9 publications

(9 citation statements)

References 6 publications

(5 reference statements)

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“…On the other hand, the InSb(111)B-(2Â2) surface in the figure exhibits a characteristic saw-tooth profile. 30,33,34 The inset to Fig. 5(b) shows an image simulation for the Sb-trimer model of InSb(111)B-(2Â2), 21,30,40,41 demonstrating a good agreement with the HR-profile TEM image of the InSb(111)B-(2Â2) surface shown in Fig.…”

Section: B Atomic Species Determination By Advanced Hr-profile Temsupporting

confidence: 65%

“…Before reaching such a conclusion, however, the atomic species of the InSb(110)-(1Â1) surface shown in Figs. 3(a)-3(c) need to be identified. As can be seen in these figures, it is difficult to distinguish In and Sb atoms by using an ordinary HR-profile TEM technique, 30,31,33,34 because the atomic numbers of In and Sb are close to each other. Although a technique based on electron diffraction may be used, 39 a HR-profile-TEM-based technique was performed for this purpose, as described below.…”

Section: B Atomic Species Determination By Advanced Hr-profile Temmentioning

confidence: 99%

“…Semiconductor surface structures that have observed by HRprofile TEM so far include Si(111)-(7Â7) and -(2Â1), 25 Si(113)-(3Â1) and -(3Â2), 26 Si(5 5 12), 27 CdTe(110)-(1Â1), 28 CdTe(100)-(2Â1) and -(3Â1), 29 InSb{111}A,B-(2Â2), 30 and InSb(001)-c(8 Â 2). 31 In addition, HR-profile TEM observations of metal depositions on a semiconductor reconstructed surface, such as Mn on Si(111)-(7Â7), 32 and Au on InSb{111}A,B-(2Â2), 33,34 have been reported.…”

Section: Introductionmentioning

confidence: 99%

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Direct imaging of InSb (110)-(1×1) surface grown by molecular beam epitaxy

Mıshıma

2011

Journal of Applied Physics

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Section: B Atomic Species Determination By Advanced Hr-profile Temsupporting

confidence: 65%

Section: B Atomic Species Determination By Advanced Hr-profile Temmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Direct imaging of InSb (110)-(1×1) surface grown by molecular beam epitaxy

Mıshıma

2011

Journal of Applied Physics

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“…10,13,14 The ultimate pressure in the specimen chamber was less than 3ϫ10 Ϫ10 Torr. The (111)A-oriented InSb substrates ͑nondoped͒ were chemically etched with a mixture of HNO 3 and lactic acid ͑1:10͒ to form a round hole of about 0.1-mm diameter with electron-transparent peripheries.…”

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confidence: 98%

Large anisotropy in thermal atomic vibrations at theInSb(111)A−(2×2)surface

et al. 2003

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Transmission electron diffraction and reflection high-energy electron diffraction have been used to study thermal vibrations at the InSb(111)A-(2ϫ2) surface. The surface In and Sb atoms show a large anisotropy in their vibrational amplitudes. In particular, contrary to common belief, the Debye temperature of surface In ͑Sb͒ atoms is larger than the corresponding bulk value in the directions normal ͑parallel͒ to the surface. We show that thermal vibrations in these directions are suppressed so as to maintain the sp 2 -type (p 3 -type͒ bonding character of surface In ͑Sb͒ atoms with their nearest neighbors.Thermal vibrations at solid surfaces are an important issue in surface science, because they relate closely with the dynamical processes on the surfaces, such as phase transition, adsorption/desorption, and epitaxial growth. It is generally assumed that thermal fluctuations are enhanced at surfaces, because surface atoms are usually less coordinated. Demuth, Marcus, and Jepsen performed a low-energy electrondiffraction analysis for Ni surfaces, and found that surface Debye temperatures are ϳ70% of the bulk value. 1 Similar trends were reported for ͑001͒ surfaces of NaCl and KCl. 2 In these studies isotropic Debye temperatures are reasonably assumed.Reduced surface Debye temperatures in the direction normal to the surface were also found for semiconductors such as Ge͑111͒ ͑Ref. 3͒ and Si͑111͒. 4 On the other hand, anisotropy in thermal vibrations at semiconductor surfaces, which is due to strong directional properties of the covalent bond, was confirmed theoretically 5 and experimentally. 6,7 Thus, thermal vibrations on semiconductor surfaces could not be described in a way similar to the case for metals and ionic crystals, and require a more appropriate description. In addition, what makes the situation more complex is a surface reconstruction, which occurs on the majority of semiconductor surfaces. Indeed, different values of vibrational amplitudes were reported for different surface atomic geometries. 5,7 This paper reports evidence that the atomic geometry of the InSb(111)A-(2ϫ2) surface causes a large anisotropy in the atomic vibrations. We found that the surface In͑Sb͒ atoms have larger ͑smaller͒ and smaller ͑larger͒ vibrational amplitudes than in the bulk in the directions parallel and normal to the surface, respectively. The present results are closely related to the atomic arrangement of this surface: the InSb(111)A-(2ϫ2) surface has the In-vacancy buckling structure, 8-10 as shown in Fig. 1. We show that the sp 2 -type (p 3 -type͒ bonding configuration of surface In ͑Sb͒ atoms with their nearest neighbors plays a key role in the reduction in the vibrational amplitude at this surface.We used transmission electron diffraction ͑TED͒ and reflection high-energy electron diffraction ͑RHEED͒ in this study. The TED analysis enables us to obtain vibrational amplitudes in the lattice planes perpendicular to an incident electron beam, i.e., in the directions parallel to the surface. It is of great advantage that TE...

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“…Our results support that the T 4 -site Sb trimer model is the structure model of the InSb(111)B-2×2 surface. We will discuss through-focus images of the 2×2 surface, as well as an in-situ observation of Au deposition on the InSb(111)B-2×2 surface [4] and HR-profile images of the InSb(001)-c(8×2) surface [5].…”

mentioning

confidence: 99%