Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting

Tyagi, Prashant; Ch, Ramesh; Kaswan, Jyoti; Dhua, Swati; John, Subish; Shukla, Ajay Kumar; Roy, Somnath C.; Kushvaha, S. S.; Muthusamy, Senthil Kumar

doi:10.1016/j.jallcom.2019.07.071

Cited by 24 publications

(18 citation statements)

References 34 publications

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“…The above structures are expected, and GaN can also have nanorods [77], nanocolumns [78], nano-pyramids [79], and so on. It can be known from the above results that changing the morphology of GaN influences the efficiency of PEC water splitting, which mainly affects the light absorption efficiency of GaN and reduces light reflection and loss.…”

Section: Gan Materials Having Different Morphologiesmentioning

confidence: 82%

Recent Progress in Gallium Nitride for Photoelectrochemical Water Splitting

Gao¹,

Liu²,

Shi³

et al. 2021

Nanowires - Recent Progress

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With the constant consumption of traditional energy sources, it is urgent to explore and develop new energy sources. Photoelectrochemical (PEC) water splitting is a method of preparing energy that can continuously generate hydrogen fuel without pollution to the environment. As an important part of the PEC water splitting system, the choice of semiconductor photoelectrode is crucial. Among these materials, gallium nitride (GaN) has attracted considerable attention due to its tunable band gap, favorable band edge positions, wide band gap, and good stability. In the past years, many reports have been obtained in GaN for PEC water splitting. This review summarizes the GaN as photoelectrodes for PEC water splitting, and methods to improve the efficiency of GaN for PEC water splitting also will be summarized from change morphology, doping, surface modification, and composition of solid solution or multiple-metal incorporation. Eventually, the future research directions and challenges of GaN for PEC water splitting are also discussed.

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Section: Gan Materials Having Different Morphologiesmentioning

confidence: 82%

Recent Progress in Gallium Nitride for Photoelectrochemical Water Splitting

Gao¹,

Liu²,

Shi³

et al. 2021

Nanowires - Recent Progress

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“…10,11,17,18 To overcome the problem of rigid substrates, two main methods have been studied to achieve the GaN-based NW films. 1,3,[18][19][20][21] One method is direct growth on flexible substrates, such as graphene and flexible metallic foils 19,[22][23][24] However, the graphene sheets can be contaminated from the metal substrates, leading to the deterioration of device performance. 3,19 The flexible metallic foils are opaque with a limited flexibility.…”

Section: Introductionmentioning

confidence: 99%

Economically detaching transparent and flexible (Al,Ga)N nanowire films with improved photoelectric response in view of ultraviolet photodetectors

et al. 2021

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“…Compared to conventional planar films, nanowires (NWs) represent a more effective route toward obtaining high flexibility and maintaining high performance under strain and deformation . Moreover, GaN-based NWs are free of extended defects, and strain can relax elastically because of the high surface-to-volume ratio and small footprint. ,− Recently, a few groups have reported the direct growth of GaN-based NW arrays on flexible substrates. − However, these flexible substrates are normally made of thin metallic foils with a thickness of ∼0.1 mm, which are opaque with a limited flexibility. Hence, to overcome the limitations of conventional films and further improve the flexibility, it is advantageous to detach (In,Ga)N NWs for flexible device applications. , …”

Section: Introductionmentioning

confidence: 99%

Detaching (In,Ga)N Nanowire Films for Devices Requiring High Flexibility and Transmittance

Zhao

Zhang

Geelhaar

et al. 2020

ACS Appl. Nano Mater.

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We propose and demonstrate a cost-effective and facile electrochemical procedure to detach films with (In,Ga)N nanowires from the original Si substrate used for growth. Without ultraviolet illumination and mechanical force, this lift-off process can be completed quickly within a few seconds. The key element for the underlying mechanism is a thin AlN layer, which acts both as a buffer layer in the epitaxial process and as a sacrificial layer in the etching process. Taking advantage of the high etching selectivity of AlN over GaN, the AlN layer can be etched quickly whereas only few reactants remain on the GaN NWs, and the latter do not suffer from corrosion. Based on this lift-off procedure, a film comprising a dense ensemble of (In,Ga)N nanowires with good flexibility and transmittance can be obtained easily. We show both light emission and mechanical–electrical energy conversion for such detached films, hence substantiating perspectives for future applications. Therefore, this lift-off method for GaN-based nanowire films is promising for mass production and various devices requiring high flexibility and/or high transmittance, including wearable intelligent electronics and piezoelectric devices.

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Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting

Cited by 24 publications

References 34 publications

Recent Progress in Gallium Nitride for Photoelectrochemical Water Splitting

Recent Progress in Gallium Nitride for Photoelectrochemical Water Splitting

Economically detaching transparent and flexible (Al,Ga)N nanowire films with improved photoelectric response in view of ultraviolet photodetectors

Detaching (In,Ga)N Nanowire Films for Devices Requiring High Flexibility and Transmittance

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