2005
DOI: 10.1016/j.jcrysgro.2005.06.042
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Direct growth of high-quality CdTe epilayers on Si(211) substrates by metalorganic vapor-phase epitaxy

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Cited by 25 publications
(14 citation statements)
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References 16 publications
(33 reference statements)
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“…12,13 A previous MOVPE study conducted a pregrowth anneal (at 800°C to 900°C) of the Si substrates together with pieces of GaAs in a separate chamber to preserve the (211) orientation during heteroepitaxy. 14 The use of TBAs in this study eliminates the requirement for a separate chamber as well as heating the Si substrate to temperatures as high as 800°C. The As passivation step also enables obtaining the Te-rich ''B'' face CdTe on nonpolar Si substrates.…”
Section: Resultsmentioning
confidence: 99%
“…12,13 A previous MOVPE study conducted a pregrowth anneal (at 800°C to 900°C) of the Si substrates together with pieces of GaAs in a separate chamber to preserve the (211) orientation during heteroepitaxy. 14 The use of TBAs in this study eliminates the requirement for a separate chamber as well as heating the Si substrate to temperatures as high as 800°C. The As passivation step also enables obtaining the Te-rich ''B'' face CdTe on nonpolar Si substrates.…”
Section: Resultsmentioning
confidence: 99%
“…Details on the growth of high-quality single-crystal CdTe epitaxial layers on (211) Si substrates have been reported elsewhere. 1,6 The growth was carried out at substrate temperatures of 325°C to 560°C, using dimethylcadmium (DMCd) and diethyltellurium (DETe) as group II and group VI precursors, respectively. Ethyl-iodide (EI), ethyl-chloride (EC), and trichloromethane (TCM) were used as dopants.…”
Section: Methodsmentioning
confidence: 99%
“…[1][2][3][4] We have previously reported on metalorganic vaporphase epitaxy (MOVPE) growth of thick singlecrystal CdTe layers (100 lm to 260 lm) on Si as well as on GaAs substrates and the development of gamma-ray detectors using these epilayers. 1,[4][5][6] The detectors were fabricated in a p-CdTe/n-CdTe/n + -Si heterojunction diode structure, where the p-CdTe and the n-CdTe layers were typically 100 lm and 5 lm thick, respectively. 5 The detectors were capable of detecting gamma radiation and measuring its energy distribution, when operated in pulse mode by applying a reverse bias voltage.…”
Section: Introductionmentioning
confidence: 99%
“…Details of the direct growth of single-crystal CdTe epitaxial films on the Si substrates in the MOVPE reactor are reported elsewhere. 7,8 The crystallinity and orientation of the grown films were evaluated by the X-ray diffraction (XRD) measurement using Cu K a as the X-ray source. The 4.2 K photoluminescence (PL) measurement using excitation from an Ar + -ion laser (514.5 nm) was used to evaluate the crystalline quality of the films.…”
Section: Methodsmentioning
confidence: 99%