Abstract:High-quality (211)B CdTe buffer layers are required during Hg 1Àx Cd x Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve fullwidth at half-maximum of 64 arc-s and a best Everson etch pit densi… Show more
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