Direct Evidence of the Dynamic Growth of Nanotwinned Copper Grain upon Electron Beam Irradiation

Dong, Zhaoshi; Zhao, Chunwang; Shen, Jiajie; Huang, Yizhong

doi:10.1021/acs.cgd.0c00651

Cited by 9 publications

(5 citation statements)

References 55 publications

(90 reference statements)

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“…This, in turn, leads to the motion of free atoms and ions, which contributes to the absorption and dissolution of nanograins. 54 The size of the grains continues to grow. One of the main results of this type of irradiation is an increase in entropy and a shift in Gibbs free energy, which can lead to an irradiation-induced change of texture and shift of the diffraction angles, as noted in previous works.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Akhtanova,

Yerlanuly,

Parkhomenko

et al. 2023

ACS Omega

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In this contribution, we investigated the properties of magnetron-sputtered TiN thin films on sapphire and quartz substrates before and after 5 MeV electron irradiation with a fluence of 7 × 1013 e/cm2. Structural, morphological, optical, and electrical properties were analyzed to observe the impact of electron irradiation on the TiN thin films. The results showed improved electrical properties of the TiN thin films due to high-energy electron irradiation, resulting in increased specific conductivity compared to the as-deposited thin films on both sapphire and quartz substrates. The structural features of the TiN thin films on the sapphire substrate transformed from polycrystalline to amorphous, while the TiN thin films deposited on the quartz substrate remained unchanged. Chemical state analysis indicated changes in the metallic bonding between Ti and N in the deposited TiN on the sapphire substrate, while TiN deposited on the quartz substrate retained its Ti–N bonding. This study provides insights into the effects of electron irradiation on TiN thin films, emphasizing the importance of investigating radiation resistance for the reliable operation of optoelectronic devices and photovoltaic systems in extreme ionizing radiation environments.

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Section: ■ Results and Discussionmentioning

confidence: 99%

“…During the knock-on process, there is a creation of an electrostatic force, which is generated by the polarization of atoms and ions under electron irradiation. This, in turn, leads to the motion of free atoms and ions, which contributes to the absorption and dissolution of nanograins . The size of the grains continues to grow.…”

Section: Resultsmentioning

confidence: 99%

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Akhtanova,

Yerlanuly,

Parkhomenko

et al. 2023

ACS Omega

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“…From the time series of the high‐resolution TEM (HRTEM) snapshots, the observation of the polycrystalline region became easier after electron beam irradiation, whereas the sizes of the grains indicated by the blue dashed line became larger as the exposure time increased (Figure 3d,e). [ 52 ] The continuous irradiation of the electron beam will give polycrystalline CrSBr enough energy for grain growth to form a more stable structure. The same behavior of the thick CrSBr sample was recorded in Figure S11 (Movie S4, Supporting Information), showing the formation of grains and grain growth.…”

Section: Resultsmentioning

confidence: 99%

“…[ 48 ] The clusters disappeared, whereas the grains became larger and more abundant. [ 52 ] From Movie S2 (Supporting Information), we elucidated the evolution of holes, including growth and refilling, in terms of the radius of the nanoholes. Since CrSBr is extremely sensitive to the electron beam, the reaction would be more intense at the beginning.…”

Section: Resultsmentioning

confidence: 99%

In Situ TEM Observation of Electron‐Beam‐Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor

Deng

Tseng

Lee

et al. 2022

Adv Elect Materials

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CrSBr is a recently developed 2D van der Waals (vdW) magnet. However, this development is still in its infancy, and hence, there has been limited relevant research so far. In this study, ultrathin CrSBr is first prepared via blue‐tape‐based mechanical exfoliation. Subsequently, Raman and X‐ray photoelectron spectroscopy analyses are performed to obtain detailed information on the chemical structure. The thickness of most exfoliated samples measured using atomic force microscopy (AFM) is ≈1.6–6.5 nm corresponding to 2–8 layers. Notably, high‐resolution images of CrSBr atomic structures are seldom observed using transmission electron microscopy (TEM). Atomic‐thick CrSBr is extremely beam‐sensitive, and hence, it is easily damaged under e‐beam irradiation. Nevertheless, e‐beam damage provides an opportunity to study the structural properties of CrSBr. Different types of knock‐on effects are recorded and further analyzed using atomic‐scale imaging. Furthermore, the high‐resolution TEM images show that the unique atomic stepped boundary is consistent with the orthorhombic slip system. The recrystallization process of CrSBr and the formation/refilling of the nanoholes are recorded via in situ TEM. These findings deepen the understanding of the fundamental insight into 2D vdW magnetic semiconductors and pave the way for next‐generation spin‐based electronics.

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“…The thicknesses of twin lamellae are almost determined by nucleation, so most lamellae are only a few nanometers thick, although some of them may merge to form larger lamellae, as described in the literature. 11 Effect of current density.-Figure 2 shows the SEM images of cross-section of electrodeposited copper films and the potential-time curves during the electrodeposition process at different current densities. Figure 1c is the XRD patterns of deposited films at different current densities.…”

Section: Resultsmentioning

confidence: 99%

Communication—Fabrication of Vertical Nanotwinned Copper with (220) Texture by Direct Current Electrodeposition

Bai

Ling

et al. 2021

J. Electrochem. Soc.

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Vertical nanotwinned copper film with (220) texture was fabricated on Si wafer with (111) oriented copper seed layer by direct current electrodeposition. A commercial additive and high current density were applied to control the preferred orientation and formation of nanotwins. The twin boundaries are (111) crystal planes, which are perpendicular to the substrate and parallel to the growth direction. It’s inferred that high cathode potential as a result of high current density can induce (220) texture, which is found to be an essential factor for the formation of vertical nanotwinned copper.

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Direct Evidence of the Dynamic Growth of Nanotwinned Copper Grain upon Electron Beam Irradiation

Cited by 9 publications

References 55 publications

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

In Situ TEM Observation of Electron‐Beam‐Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor

Communication—Fabrication of Vertical Nanotwinned Copper with (220) Texture by Direct Current Electrodeposition

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